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Vishay E Series N-Channel MOSFET 47 A, 600 V, Enhancement Mode, 3-Pin TO-247 SiHG47N60E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | SiHG47N60E-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 64mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 357W |
| Typical Gate Charge Qg @ Vgs | 147nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 47 A.
- Maximum drain-source voltage of 600 V suitable for high-voltage applications.
- Low on-resistance with Rds(on) of 64 milliohms for efficient switching.
- Fast switching capability with ultra-low gate charge of 147 nC.
- Capable of dissipating maximum power of 357 Watts.
- Designed with a 3-pin Through Hole TO-247 package type for easy PCB mounting.
- Operating temperature range from -55°C up to 150°C for harsh environments.
- Maximum gate-source voltage range from -20 V to +20 V.
Product Description
Vishay SiHG47N60E-GE3 E Series N-Channel MOSFET is a high-performance transistor designed for applications requiring high voltage and current handling capabilities. Featuring an ultra-low maximum on-resistance and low figure-of-merit, this device offers enhanced efficiency and fast switching characteristics. Its enhancement mode operation and robust 3-pin TO-247 through-hole package ensure reliability in demanding industrial environments.
This MOSFET supports a maximum continuous drain current of 47 amperes and a drain-source voltage up to 600 volts. It features a low RDS(on) resistance of 64 milliohms, reducing conduction losses during operation. With a typical gate charge of 147 nano-Coulombs at Vgs, the device enables rapid switching, making it suitable for power conversion and motor control applications.
The device operates effectively across a wide temperature range from -55°C to 150°C, supporting various industrial, telecom, and server power supply applications. The maximum power dissipation rating of 357 Watts allows for handling significant loads without thermal stress. The maximum gate-source voltage of ±20 V offers robustness against voltage spikes.
The compact TO-247 package measures 15.87mm in length, 5.31mm in width, and 20.7mm in height, suitable for through-hole mounting on printed circuit boards. The forward voltage drop of 1.2 V minimizes power loss and heat generation in circuits.
Low figure-of-merit (RDS(on) × Qg) for efficient power management. Low input capacitance reduces switching losses. Fast switching capability improves energy efficiency. Suitable for applications including servers, telecom power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS).
3-pin TO-247 through-hole package for easy integration.
This product is ideal for use in demanding industrial and electronic applications including power management, industrial controls, and renewable energy systems. It ensures high reliability and performance in thermal and electrical stress conditions.
Browse the Electronics & Electricals category at EnvMart for similar high-performance MOSFETs and semiconductor devices.
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Frequently Asked Questions
The Vishay SiHG47N60E-GE3 supports a maximum continuous drain current of 47 A.
It can handle a maximum drain-source voltage of 600 V, making it suitable for high-voltage applications.
The device features a low on-resistance with Rds(on) of 64 milliohms, which helps in reducing conduction losses during operation.
The typical gate charge at Vgs is 147 nC, enabling rapid switching capabilities.
It has a maximum power dissipation rating of 357 Watts, allowing it to handle significant loads without thermal stress.
This model operates effectively across a wide temperature range from -55°C to 150°C, suitable for harsh environments.
It is designed in a 3-pin TO-247 through-hole package, which facilitates easy PCB mounting.
The dimensions of the Vishay SiHG47N60E-GE3 are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
The maximum gate-source voltage range is from -20 V to +20 V, providing robustness against voltage spikes.
This MOSFET is suitable for applications including power conversion, motor control, servers, telecom power supplies, and LED lighting.
The forward voltage drop is 1.2 V, which minimizes power loss and heat generation in circuits.
It features an N-channel type, designed for enhancement mode operation, which enhances efficiency in various applications.
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