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Infineon N-Channel MOSFET 300A 100V Enhancement Mode 9-Pin HSOF IPT015N10N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.1mm |
| Model | IPT015N10N5ATMA1 |
| Width | 10.58mm |
| Mount Type | Surface |
| Series | IPT015N10N5 |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF |
| Minimum Operating Temperature | -55°C |
| Pin Count | 9 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 300A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 169nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- This MOSFET delivers a continuous drain current of 300 A for demanding loads.
- The maximum drain-source voltage is rated at 100 V for robust switching.
- With a low on-resistance of 2 milliohms, conduction losses are minimized.
- The device supports a maximum gate-source voltage of 20 V allowing flexible gate drive options.
- The typical gate charge of 169 nC reduces switching energy expenditure.
- It has a maximum power dissipation rating of 375 W suitable for high-power operation.
- Operating temperature range spans from -55 °C to 175 °C for harsh environments.
- The 9-pin HSOF package enables surface mount assembly with reliable electrical connections.
Product Description
Infineon IPT015N10N5ATMA1 is a high-current N-Channel MOSFET designed to provide efficient power switching at a maximum continuous drain current of 300 A and a maximum drain-source voltage of 100 V. Packaged in a compact 9-pin HSOF surface-mount footprint, it is engineered for robust conduction and rapid switching in demanding electronic systems.
This enhancement-mode device offers a low drain-source resistance of 2 mΩ, minimizing conduction losses, and a gate charge optimized at 169 nC, balancing switching energy trade-offs. The maximum power dissipation is rated at 375 W, ensuring reliable performance under high-power conditions.
It operates within a wide temperature range from -55 °C to 175 °C, making it suitable for harsh environmental applications. The device ensures flexible gate drive voltages with a maximum gate-source voltage tolerance of 20 V. Its 9-pin configuration supports efficient current paths and comprehensive gate, drain, and source layout arrangements.
The MOSFET is ideal for applications such as high-current motor drive stages, synchronous rectification in power supplies, inverter modules in industrial drives, and DC-DC converters in power management systems. Its properties make it suitable for traction or propulsion electronics requiring compact, high-power, and reliable switching components.
This MOSFET supports a continuous drain current of 300 A. It has a maximum drain-source voltage of 100 V for enhanced switching reliability. The device features a low on-resistance of 2 milliohms to reduce conduction losses.
Compatible with gate voltages up to 20 V enabling flexible control. Its typical gate charge of 169 nC limits switching losses. Rated for a maximum power dissipation of 375 W for high-power operation. Operational between -55 °C and 175 °C to suit extreme conditions.
9-pin HSOF surface-mount package for robust assembly. Enhancement mode switching ensures suitable gate drive flexibility. Designed for industrial, automotive, and power management applications. Explore the Infineon MOSFET range on EnvMart to find cutting-edge semiconductor components optimized for power electronics and industrial uses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 300 A, making it suitable for demanding loads.
This MOSFET has a maximum drain-source voltage rating of 100 V, which enhances its switching reliability.
It features a low on-resistance of 2 milliohms, which helps minimize conduction losses during operation.
The maximum power dissipation rating for this model is 375 W, suitable for high-power applications.
It operates within a wide temperature range from -55 °C to 175 °C, making it suitable for harsh environments.
The typical gate charge is 169 nC, which helps reduce switching energy expenditure.
This model supports a maximum gate-source voltage of 20 V, allowing for flexible gate drive options.
It comes in a 9-pin HSOF surface-mount package, designed for reliable electrical connections.
The dimensions of this MOSFET are 10.1 mm in length, 10.58 mm in width, and 2.4 mm in height.
It is ideal for applications such as high-current motor drive stages, synchronous rectification in power supplies, and inverter modules in industrial drives.
This device is an N-channel MOSFET, which is commonly used for efficient power switching.
The forward voltage for this MOSFET is rated at 900 mV.
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