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Infineon N-Channel MOSFET, 24 A, 200 V Enhancement, 8-Pin TDSON BSC500N20NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC500N20NS3GATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC500N20NS3 G |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- High maximum continuous drain current of 24 A ensures effective power handling.
- Maximum drain-source voltage rating of 200 V suitable for various electronic circuits.
- Low drain-source resistance of 50 mΩ minimizes conduction losses.
- Enhancement mode channel operation enables efficient switching.
- Maximum power dissipation rated at 96 W for robust performance.
- Compact 8-Pin TDSON surface mount package with 6.35 mm width.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Typical gate charge of 15 nC at Vgs aids in fast switching speeds.
Product Description
Infineon BSC500N20NS3GATMA1 is a high-performance N-Channel MOSFET designed for industrial electronic applications requiring efficient power switching and high reliability. It supports a maximum continuous drain current of 24 A and a maximum drain-source voltage of 200 V, making it ideal for synchronous rectification, DC-DC converters, and power management systems.
The device features a compact 8-Pin TDSON surface mount package with dimensions of 6.35 mm width, 5.35 mm length, and 1.1 mm height, facilitating dense PCB layouts and minimal board space consumption. Its low drain-source resistance (50 mΩ) and low gate charge (15 nC) contribute to high efficiency and reduced power losses.
Operating temperature spans an extensive range from -55°C to 150°C, ensuring durability under demanding conditions. The enhancement mode operation coupled with a maximum gate-source voltage of 20 V offers reliable switching behavior in power electronics applications.
Applications include use in synchronous rectification for AC-DC switched-mode power supplies (SMPS), motor controls for 48 V to 110 V systems, isolated DC-DC converters, lighting for 110 V AC networks including HID lamps, Class D audio amplifiers, uninterruptible power supplies (UPS), and LED power supply circuits.
High efficiency and power density in power management circuits. Suitable for automotive, industrial, and commercial electronics applications. Environmentally compliant with halogen-free design. Infineon's BSC500N20NS3GATMA1 continues the OptiMOS™ legacy with benchmark performance optimized for modern electronic designs.
Explore more discrete semiconductor components and power MOSFETs in the Electronics & Electricals section at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
This MOSFET has a maximum drain-source voltage rating of 200 V.
The drain-source resistance is 50 mΩ, which helps minimize conduction losses.
The typical gate charge at Vgs is 15 nC, contributing to fast switching speeds.
It comes in an 8-Pin TDSON surface mount package with dimensions of 6.35 mm width, 5.35 mm length, and 1.1 mm height.
The operating temperature range spans from -55°C to 150°C, suitable for harsh environments.
The maximum power dissipation rated for this model is 96 W.
This device features an enhancement mode N-channel operation.
The maximum gate-source voltage is 20 V.
This model is suitable for applications such as synchronous rectification, DC-DC converters, and motor controls for 48 V to 110 V systems.
The forward voltage for this model is 900 mV.
The country of origin for this MOSFET is India.
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