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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.14mm |
| Length | 10.45mm |
| Model | VBT4045BP-E3/8W |
| Width | 4.83mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 40A |
| Peak Reverse Repetitive Voltage Vrrm | 45V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 85mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 240A |
| Maximum Forward Voltage Vf | 630mV |
Vishay VBT4045BP-E3/8W Schottky Diode is a high-performance trench MOS barrier rectifier designed for industrial and electronic applications requiring efficient power conversion. It operates at a maximum continuous forward current of 40 A and a peak reverse repetitive voltage of 45 V, making it suitable for high-current, low-voltage circuits.
The device utilizes a patented trench MOS barrier technology that minimizes stored charge and improves switching speed compared to planar Schottky rectifiers. This results in lower conduction losses and enhanced efficiency in both AC/DC switched mode power supplies and DC/DC converters.
Housed in a compact TO-263 (D2PAK) surface-mount package, the diode measures 10.45 mm in length, 9.14 mm in height, and 4.83 mm in width, providing ease of integration on printed circuit boards where space constraints exist. The diode supports operation over a broad temperature range from -40°C to 150°C, ensuring reliable performance under various environmental conditions.
This single diode with 3 pins offers a low maximum forward voltage drop of 630 mV, reducing power dissipation in high-current paths. Its surge current capacity is rated at 240 A to withstand transient currents, while the peak reverse current is limited to 85 mA for enhanced reverse-voltage reliability.
The Vishay VBT4045BP-E3/8W does not conform to automotive standards but complies with RoHS directives, ensuring environmentally responsible manufacturing. It is produced in China under stringent quality assurance practices.
Features a patented Trench MOS Barrier Schottky structure for improved efficiency. Maximum continuous forward current of 40 amperes and peak reverse voltage of 45 volts. Compact TO-263 package with precise industrial dimensions.
Wide operating temperature range from -40°C to 150°C. Low forward voltage of 630 mV to enhance efficiency and reduce losses. Peak non-repetitive forward surge current rating of 240 amperes for surge handling. Single diode configuration with 3-pin surface mount packaging.
RoHS compliant and manufactured in China.
This Schottky diode series is ideal for industrial, manufacturing, and electronic engineering applications demanding fast switching and high power density. Browse more Vishay semiconductor products in the Schottky Diode category on EnvMart.
Explore more products in our Schottky Diodes & Rectifiers category.
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