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Taiwan Semiconductor 100 V 2 A Fast Recovery Diode Surface Mount DO-214AA RS2B R5

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.61mm
Length 4.75mm
Model RS2B R5
Width 3.73mm
Mount Type Surface
Series RS2
Maximum Operating Temperature 150°C
Package Type DO-214AA
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Continuous Forward Current If 2A
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Single
Rectifier Type Fast Recovery
Peak Reverse Current Ir 50μA
Peak Non-Repetitive Forward Surge Current Ifsm 50A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 150ns

Key Features

  • This diode features a maximum continuous forward current of 2 A for reliable operation.
  • The peak reverse repetitive voltage is rated at 100 V ensuring robust voltage withstand capability.
  • It has a fast recovery time of 150 ns which supports high-frequency switching environments.
  • This device is housed in a compact DO-214AA surface mount package measuring 4.75 mm length, 3.73 mm width, and 2.61 mm height.
  • The diode supports a peak non-repetitive forward surge current of 50 A for transient conditions.
  • Peak reverse current is low at 50 μA minimizing leakage and losses.
  • Operating temperature range is wide from -55°C to 150°C suitable for diverse industrial applications.
  • The maximum forward voltage drop is 1.3 V improving efficiency in power circuits.

Product Description

The Taiwan Semiconductor RS2B R5 is a high-quality 2 A fast recovery diode designed for surface mount applications, featuring a 100 V peak reverse voltage and housed in the DO-214AA package. This diode is optimized for fast switching in power supply and rectification circuits, delivering excellent performance in demanding industrial and electronic equipment.

This device supports a maximum continuous forward current of 2 A and a peak forward surge current of 50 A, allowing it to handle transient loads efficiently without compromising reliability.

Its fast recovery time of 150 nanoseconds significantly reduces switching losses and enhances performance in high-frequency applications such as power inverters, industrial controls, and automotive circuits.

The compact DO-214AA package with dimensions 4.75 mm length, 3.73 mm width, and 2.61 mm height facilitates compact PCB designs and surface mounting techniques, promoting efficient assembly and space saving.

Maximum continuous forward current of 2 A. Peak reverse voltage of 100 V withstands high voltage spikes. Fast recovery time of 150 ns suitable for high-speed switching. Low peak reverse current of 50 μA for reduced power loss.

Operating temperature from -55°C up to 150°C ensures ruggedness. Compact DO-214AA surface mount package. Peak forward voltage of 1.3 V improves efficiency. Manufactured in China under Taiwan Semiconductor brand. Ideal for industrial, automotive, consumer electronics, and power management applications.

This diode is essential for engineers requiring fast recovery performance with reliable voltage and current ratings, ideal for use in power conversion, rectifier circuits, and protective components in electronics.

Explore the full range of Taiwan Semiconductor products on EnvMart for high-performance semiconductor solutions to power your designs.

Explore more products in our Schottky Diodes & Rectifiers category.

Taiwan Semiconductor 100 V 2 A Fast Recovery Diode Surface Mount DO-214AA RS2B R5
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Frequently Asked Questions

The maximum continuous forward current of this diode is 2 A, allowing for reliable operation in various applications.

The peak reverse repetitive voltage rating is 100 V, ensuring the diode can withstand high voltage spikes.

This model features a fast recovery time of 150 ns, making it suitable for high-frequency switching environments.

The dimensions of the DO-214AA package are 4.75 mm in length, 3.73 mm in width, and 2.61 mm in height.

The diode supports a peak non-repetitive forward surge current of 50 A, which allows it to handle transient conditions efficiently.

The operating temperature range for this diode is from -55°C to 150°C, suitable for diverse industrial applications.

The maximum forward voltage drop of this diode is 1.3 V, which helps improve efficiency in power circuits.

The peak reverse current is rated at 50 μA, which minimizes leakage and losses in the circuit.

This model uses a single diode configuration, which is common for rectifier applications.

The fast recovery feature significantly reduces switching losses, enhancing performance in applications like power inverters and industrial controls.

This diode is typically used in power conversion, rectifier circuits, and protective components in electronics, making it versatile for various sectors.

The country of origin for this product is China, where it is manufactured under the Taiwan Semiconductor brand.

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