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onsemi Isolated Dual N-Channel Power MOSFET 115mA 60V Enhancement 6-Pin SC-70 2N7002DW
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 2mm |
| Model | 2N7002DW |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET exhibits low on resistance and low gate threshold voltage for efficient switching.
- It supports fast switching speeds suitable for high-frequency applications.
- The device features a dual isolated N-channel transistor configuration.
- Operates within a temperature range from -55°C to +150°C.
- Maximum power dissipation rating is 200 mW, allowing reliable operation under demanding conditions.
- Constructed with a tiny form factor, its dimensions are 2 mm length, 1.25 mm width, and 1 mm height.
- Designed for surface mount applications with 6 pins for easy PCB integration.
- Enhancement mode MOSFET technology enhances performance in power management and motor control circuits.
Product Description
onsemi 2N7002DW Isolated Dual N-Channel Power MOSFET offers reliable and efficient performance for electronic and power management applications. It operates with a maximum continuous drain current of 115 mA and a maximum drain-source voltage of 60 V. This device features enhancement mode operation and dual isolated transistor configuration, ideal for compact circuit designs.
With ultra-small dimensions (2 mm length, 1.25 mm width, 1 mm height), it fits in space-constrained applications on surface mount PCBs. The 6-pin SC-70 package supports robust mounting and electrical connection. The MOSFET is designed to minimize on-state resistance and gate threshold voltage to deliver efficient switching with low power loss.
The device can operate over a wide temperature range from -55°C up to +150°C, ensuring reliability in various environmental conditions. Its maximum power dissipation of 200 mW supports stable operation in power supply circuits, motor controls, and power management functions.
This 2N7002DW MOSFET from onsemi is commonly used in industrial, automotive, electronic, and consumer applications requiring compact, low-power switching solutions. Low on resistance for energy-efficient performance. Fast switching speed for responsive control.
Dual isolated N-channel configuration enhances function in complex circuits. Wide operating temperature range for durability. Compact surface mount package saves PCB space. Reliable transistor operation with 6-pin connectivity.
Ideal for motor controls and power management functions. Explore the extensive range of MOSFET devices from onsemi available on EnvMart to meet diverse component and power needs in your electronics projects and industrial systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 115 mA.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET operates within a temperature range from -55°C to +150°C.
The maximum power dissipation rating is 200 mW, allowing reliable operation under demanding conditions.
It has dimensions of 2 mm in length, 1.25 mm in width, and 1 mm in height.
This model comes in a 6-pin SC-70 package designed for surface mount applications.
It features a dual isolated N-channel configuration.
The maximum gate-source voltage is -20V to +20V.
The maximum drain-source resistance is 13.5Ω.
It is commonly used in industrial, automotive, electronic, and consumer applications requiring compact, low-power switching solutions.
This model contains 2 elements per chip.
The channel mode is enhancement, which enhances performance in power management and motor control circuits.
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