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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 13 A, 600 V Enhancement Mode, 3-Pin TO-220 STP13NK60ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP13NK60ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- High-current capacity of 13 amperes for robust switching applications.
- Maximum drain-source voltage rating of 600 volts ensures high-voltage performance.
- Occupies compact TO-220 package suitable for through-hole mounting.
- Low on-resistance of 550 milliohms minimizes conduction losses.
- Gate source voltage tolerance ranges from -30 V to +30 V for reliable gate control.
- Forward voltage drop of 1.6 V suitable for efficiency in power circuits.
- Maximum power dissipation rating of 35 watts supports moderate power applications.
- Designed to operate reliably from -55°C up to 150°C for demanding environments.
Product Description
The STMicroelectronics STP13NK60ZFP is an advanced N-Channel MDmesh SuperMESH enhancement mode MOSFET designed to deliver dependable performance in high-voltage and high-current electronic applications. Packaged in a 3-pin TO-220 format, it supports a continuous drain current of 13 amperes while withstanding a maximum drain-source voltage of 600 volts, making it ideal for power management and switching tasks in industrial, commercial, and automotive electronic circuits.
This MOSFET features a low on-resistance of 550 milliohms, reducing power loss during conduction and improving efficiency. Its gate-source voltage margin from -30 V to +30 V allows precise gate control, and its forward voltage drop is rated at 1.6 volts. The device can dissipate up to 35 watts of power and is rated for operation in temperatures ranging from -55°C to 150°C, enabling reliable function even in harsh or variable temperature environments.
The typical gate charge at Vgs is 66 nanocoulombs, facilitating fast and efficient switching dynamics. The compact dimensions (length 10.4 mm, width 4.6 mm, height 16.4 mm) combined with its through-hole mount type provide versatility for PCB layouts and prototyping needs.
This MOSFET is widely used in power supplies, motor control, lighting, and industrial automation systems. It supports enhancements in power efficiency and thermal management, catering to the demands of modern electronic manufacturing and design requirements.
Set within the MDmesh, SuperMESH series of STMicroelectronics, the STP13NK60ZFP conveys consistent quality and reliability in discrete semiconductor applications, especially suited for power electronics solutions.
High-current capability ensures robustness in switching power electronics. Wide voltage ratings suit a variety of high-voltage applications. Compact TO-220 packaging accommodates easy installation and heat dissipation. Enhanced gate voltage tolerance for secure operation and device protection.
Optimized gate charge for efficient switching during rapid operation cycles. Explore the extensive range of semiconductor components and power MOSFETs at EnvMart for tailored industrial electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 amperes.
It has a maximum drain-source voltage rating of 600 volts.
The on-resistance of this MOSFET is 550 milliohms, which helps minimize conduction losses.
The gate-source voltage tolerance ranges from -30 V to +30 V, allowing for reliable gate control.
The forward voltage drop for this MOSFET is rated at 1.6 volts.
It supports a maximum power dissipation rating of 35 watts.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.
It is designed to operate reliably from -55°C up to 150°C.
This MOSFET comes in a 3-pin TO-220 package suitable for through-hole mounting.
The typical gate charge at Vgs is 66 nanocoulombs, facilitating fast switching dynamics.
This MOSFET is widely used in power supplies, motor control, lighting, and industrial automation systems.
It is part of the MDmesh, SuperMESH series by STMicroelectronics.
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