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onsemi PowerTrench Type P-Channel Enhancement MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 FDC602P

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onsemi PowerTrench Type P-Channel Enhancement MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 FDC602P

Name: onsemi PowerTrench Type P-Channel Enhancement MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 FDC602P
Brand: onsemi
SKU: 227596
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	3mm
Model	FDC602P
Width	1.7mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	6
Channel Type	Type P
Maximum Continuous Drain Current Id	5.5A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	53mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.6W
Typical Gate Charge Qg @ Vgs	14nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

Designed with PowerTrench technology for increased efficiency and power density.
Features a shielded-gate structure that optimizes charge balance, lowering the Figure of Merit.
Supports a maximum continuous drain current of 5.5 A with a drain-source voltage of 20 V.
Offers low typical gate charge of 14 nC and a maximum drain-source resistance of 53 milliohms.
Operates efficiently at temperatures ranging from -55°C to 150°C.
Surface mount package SOT-23 with compact dimensions for space-saving PCB design.
Includes a soft reverse recovery body diode, enhancing switching performance and reducing snubber circuit requirements.
Maximum power dissipation of 1.6 W for reliable operation in low power devices.

Product Description

The onsemi FDC602P is a PowerTrench Type P-Channel MOSFET transistor that excels in power switching efficiency and compact design. It supports a maximum continuous drain current of 5.5 A and a maximum drain-source voltage of 20 V, making it suitable for low voltage, moderate current applications.

Constructed with advanced PowerTrench technology, this device combines a shielded-gate structure providing exceptional charge balance and a low Figure of Merit (FOM). The transistor’s soft body diode allows for smoother reverse recovery, eliminating the necessity for additional snubber circuitry in many designs.

Packaged in a compact 6-pin SOT-23 surface mount format measuring 3 mm in length, 1.7 mm in width, and 1 mm in height, it is ideal for space-constrained electronics and systems requiring efficient thermal management. The enhancement mode channel ensures reliable switching with low gate charge (14 nC) and minimal on-resistance (53 milliohms).

This MOSFET operates across a wide temperature range from -55°C to 150°C, making it durable for use in industrial, automotive, telecommunications, and power supply applications. Its maximum power dissipation is rated at 1.6 W, which suits low to medium power circuits that demand high efficiency and compactness.

Employs PowerTrench technology for enhanced system efficiency. Features a shielded-gate structure that reduces switching losses. Compact 6-pin SOT-23 surface mount packaging for space-saving designs. Maximum drain current of 5.5 A and drain-source voltage of 20 V.

Low gate charge and on-resistance for efficient switching. Wide operating temperature range from -55°C to 150°C. Soft reverse recovery diode minimizes additional circuit requirements. Ideal for industrial, automotive, telecommunications, and power supply applications.

This high-performance MOSFET is a reliable component for engineers seeking power efficiency, compact packaging, and robust electrical characteristics. Explore more products like onsemi MOSFETs and semiconductors in EnvMart's extensive catalog.