$0.64
$0.62
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET 2.6 A 20 V Enhancement 6-Pin MicroFET Thin FDME1023PZT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.6mm |
| Model | FDME1023PZT |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MicroFET Thin |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 142mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features an enhancement mode channel for reliable performance.
- It has a compact 6-pin MicroFET Thin package allowing surface mounting.
- The device supports a maximum power dissipation of 1.4 W and operates between -55°C and 150°C.
- Its low gate charge of 7.7 nC enables fast switching speeds.
- The MOSFET includes an isolated transistor configuration with two elements per chip.
- Advanced PowerTrench technology ensures low on-resistance of 142 mΩ for energy efficiency.
- It complies with RoHS standards ensuring environmental safety.
- Typical forward voltage is 1.2 V with a maximum gate-source voltage rating of -8 V to +8 V.
Product Description
onsemi FDME1023PZT Isolated PowerTrench 2 Type P-Channel Power MOSFET is engineered for high-efficiency power switching in industrial and electronic applications, offering a continuous drain current capability of 2.6 Amperes and a maximum drain-source voltage of 20 Volts.
The device incorporates advancement in PowerTrench technology, delivering a low drain-source resistance of 142 milliohms and a minimized gate charge of 7.7 nanocoulombs, making it suitable for synchronous rectification in AC/DC power supplies, enhancing system power density and efficiency.
Mounted in a 6-pin MicroFET Thin package, this MOSFET supports surface mounting in compact electronic designs while withstanding operating temperatures from -55°C up to 150°C. Its isolated transistor configuration and dual element chip structure improve reliability and thermal management.
This enhancement mode MOSFET includes a soft reverse recovery body diode, reducing the need for snubber circuits or higher voltage rated MOSFETs. It is RoHS compliant and designed to meet stringent environmental and quality standards.
This Power MOSFET is ideal for industrial electronics, power management systems, and switching power supplies. Its compact form factor and excellent electrical characteristics make it suitable for laboratory, manufacturing, and commercial electronic devices.
Key features include low gate charge, high temperature tolerance, and efficient power dissipation suitable for various industrial applications. PowerTrench technology ensures long-term reliability and system efficiency improvements.
Set contains one FDME1023PZT MOSFET transistor. Explore more power semiconductors and discrete device solutions in the Electronics & Electricals category at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 2.6 Amperes.
The maximum drain-source voltage for the FDME1023PZT is 20 Volts.
This model operates within a temperature range of -55°C to 150°C.
The typical gate charge for this power MOSFET is 7.7 nanocoulombs.
It is packaged in a 6-pin MicroFET Thin package, suitable for surface mounting.
The maximum power dissipation for the FDME1023PZT is 1.4 Watts.
This MOSFET features a maximum drain-source resistance of 142 milliohms.
This model has a Type P channel configuration.
It complies with RoHS standards, ensuring environmental safety.
The FDME1023PZT includes two elements per chip in its isolated transistor configuration.
The typical forward voltage for the FDME1023PZT is 1.2 Volts.
The height of this MOSFET is 0.5 mm.
Related Products
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
New
$0.64
$0.62
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent