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onsemi PowerTrench N-Channel MOSFET, 16 A, 100 V Enhancement Mode, 8-Pin MLP FDMC3612

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onsemi PowerTrench N-Channel MOSFET, 16 A, 100 V Enhancement Mode, 8-Pin MLP FDMC3612

Name: onsemi PowerTrench N-Channel MOSFET, 16 A, 100 V Enhancement Mode, 8-Pin MLP FDMC3612
Brand: onsemi
SKU: 227525
Price: 0.6 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	750μm
Length	3.3mm
Model	FDMC3612
Width	3.3mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	MLP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	16A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	212mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	35W
Typical Gate Charge Qg @ Vgs	14.4nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
onsemi PowerTrench N-Channel MOSFET, 16 A, 100 V Enhancement, 8-Pin MLPBrand	onsemi

Key Features

This device operates under enhancement mode channel type with an 8-pin MLP package.
Maximum continuous drain current is rated at 16 A.
Drain source voltage can reach up to 100 V for robust power handling.
It supports a maximum power dissipation of 35 W for efficient operation.
Device dimensions include length and width of 3.3 mm and height of 750 μm.
Operates within a temperature range from -55°C to 150°C, suitable for industrial conditions.
Typical gate charge is 14.4 nC at Vgs, ensuring fast switching.
Maximum gate source voltage is ±20 V, providing gate protection.

Product Description

onsemi FDMC3612 is a PowerTrench® N-Channel MOSFET designed for high efficiency and reliable operation in electronic and power management systems. It supports a continuous drain current of 16 A and a drain source voltage rating of 100 V, making it suitable for demanding industrial, automotive, and consumer electronic applications.

The device features an 8-pin MLP surface mount package with compact dimensions of 3.3 mm length and width and 750 μm height. It delivers a maximum power dissipation capacity of 35 W, ensuring stable performance under heavy load conditions and elevated temperatures ranging from -55°C to 150°C.

Its enhancement channel mode ensures low resistance switching with a maximum drain source resistance of 212 mΩ, combined with a typical gate charge of 14.4 nC at Vgs for fast switching speeds. The maximum gate source voltage tolerance of ±20 V provides robust gate protection and reliability.

This MOSFET has a forward voltage drop of 1.2 V, optimizing efficiency by minimizing conduction losses. The surface mount design suits modern compact PCB assemblies, supporting advanced electronic and power applications across industrial automation, power converters, and automotive electronics.

This MOSFET is ideal for power conversion, switching regulators, and load switching applications. Suitable for integration in industrial electronics, automotive systems, and general electronic components manufacturing. Compact MLP packaging facilitates space-saving product designs.

Robust operating temperature range supports harsh environmental deployments. High power dissipation rating supports demanding electrical loads.

Choose the onsemi FDMC3612 to leverage PowerTrench technology for efficient and high-performance MOSFET solutions in your electronic systems. Explore more semiconductor products on EnvMart for comprehensive industrial, laboratory, and electronics component needs.

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