$1.20
$1.16
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi PowerTrench N-Channel MOSFET, 8 A, 150 V, Enhancement Mode, 3-Pin TO-252 Package FDD86250
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD86250 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 132W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a PowerTrench architecture for improved performance and reliability.
- Enhancement mode channel with N-channel type for efficient switching applications.
- Comes in a compact 3-pin TO-252 surface mount package.
- Supports maximum power dissipation of 132 W for robust operation.
- Operates across a wide temperature range from -55°C to 150°C.
- Has a low maximum drain-source resistance of 45 mΩ, minimizing conduction losses.
- Gate charge of 23 nC at Vgs enhances switching speed and efficiency.
- Designed to withstand gate-source voltages from -20 V to +20 V for reliability.
Product Description
onsemi FDD86250 is a PowerTrench N-Channel MOSFET designed for high-performance semiconductor switching applications. Rated for a maximum continuous drain current of 8 A and a drain-source voltage of 150 V, it is suitable for efficient power management in various industrial and commercial electronic devices.
This device is packaged in a 3-pin TO-252 surface mount package, making it compact and easy to implement in modern PCB layouts where space and thermal management are critical.
The MOSFET features enhancement mode operation with a low forward voltage of 1.3 V and maximum power dissipation capacity of 132 W, supporting high-efficiency energy conversion and reduced heat generation under load.
Operational temperature range extends from -55°C to 150°C, providing durability and stability in harsh environmental conditions. It has a very low maximum drain-source resistance of 45 mΩ, which helps to minimize conduction losses in power circuits.
Gate characteristics include a typical gate charge of 23 nC at Vgs, enabling fast switching speeds necessary for power electronics. The gate can handle voltages up to ±20 V, enhancing device reliability in transient conditions.
Applications include power control, DC-DC converters, motor drives, and general industrial electronics requiring robust, efficient MOSFETs. Features PowerTrench architecture for repeatable performance. Compact TO-252 surface mount package for ease of use in circuit design.
Operates reliably across wide temperature ranges suitable for industrial use. Low Rds(on) ensures efficiency with minimal heat loss. Supports high continuous drain current capacity for demanding loads. Explore more onsemi MOSFETs and power semiconductor products on EnvMart for diverse electronic component solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 8 A, making it suitable for various power management applications.
This MOSFET has a maximum drain-source voltage rating of 150 V, allowing it to handle high voltage applications effectively.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It supports a maximum power dissipation capacity of 132 W, which aids in efficient energy conversion.
This unit operates across a wide temperature range from -55°C to 150°C, ensuring reliability in various environmental conditions.
The maximum drain-source resistance (Rds(on)) is 45 mΩ, which helps minimize conduction losses in power circuits.
The typical gate charge at Vgs is 23 nC, enhancing the switching speed and efficiency of the device.
This model features an N-channel type with enhancement mode operation, suitable for efficient switching applications.
The forward voltage (Vf) is 1.3 V, which is relevant for its performance in power management applications.
It can withstand gate-source voltages from -20 V to +20 V, enhancing its reliability during transient conditions.
This model is suitable for applications such as power control, DC-DC converters, and motor drives, among others.
The device comes in a compact 3-pin TO-252 surface mount package, facilitating easy implementation in modern PCB layouts.
Related Products
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
New
Recently Viewed Products
$1.20
$1.16
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent