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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FGH40N60UFDTU |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 290W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
The onsemi FGH40N60UFDTU model is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronic applications requiring high current and voltage capacity. It supports a maximum continuous collector current of 80 A and a maximum collector-emitter voltage of 600 V, making it suitable for industrial, automotive, and manufacturing use cases where efficient switching is critical.
Housed in a through-hole 3-Pin TO-247 package, this IGBT offers ease of mounting and integration into power modules and discrete semiconductor circuits. With a maximum power dissipation rating of 290 W, the device ensures thermal stability and reliability in high-power switching environments.
Featuring a gate-emitter voltage tolerance of ±20 V and a low collector-emitter saturation voltage (VceSAT) of 2.4 V, it provides fast switching performance combined with low conduction losses. The operating temperature range extends from -55°C to 150°C, allowing operation in harsh conditions common to industrial and automotive applications.
As a RoHS-compliant field-stop series device, the FGH40N60UFDTU meets stringent environmental and quality standards. It seamlessly blends the simple drive advantages of MOSFETs with the high-current bearing capabilities of bipolar transistors, making it a versatile transistor choice for power electronics designers.
This N-Channel IGBT enables efficient power conversion and switching in inverter circuits, motor drives, and industrial power supplies. The TO-247 through-hole form factor assists with heat sinking and mechanical stability in assembly.
Applications include industrial automation, HVAC systems, energy management, and electric vehicle power control modules. The device supports fairchild semiconductor compatible design approaches, as onsemi acquired Fairchild's IGBT technology.
Explore EnvMart for more high-quality semiconductor components, including IGBTs, MOSFETs, bipolar transistors, and related electronic parts suited for engineering, manufacturing, and repair needs.
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