onsemi PowerTrench Type P-Channel MOSFET 6 A 12 V Enhancement 6-Pin SOT-23 FDC606P

onsemi FDC606P PowerTrench Type P-Channel MOSFET is a new, advanced 6 A, 12 V enhancement mode transistor enclosed in a 6-pin SOT-23 package designed for surface mounting. PowerTrench MOSFETs from onsemi are engineered for optimized power switches that enhance overall system efficiency and increase power density in electronic circuits.

This MOSFET features a shielded-gate structure that provides charge balance, significantly lowering the figure of merit (FOM) compared to earlier generations. The device has a maximum continuous drain current of 6 amperes and supports a maximum drain to source voltage of 12 volts, making it suitable for various power management applications.

The maximum drain-source resistance is low, at 53 milliohms, reducing conduction losses during operation. It supports a maximum power dissipation of 1.6 watts, ensuring robust performance in power switching roles.

With a typical gate charge of 18 nanocoulombs at specified gate voltage, the FDC606P enables fast switching. The soft reverse recovery body diode characteristic allows the elimination of snubber circuits or replacing higher voltage rating MOSFETs, enhancing efficiency in AC/DC power supplies and synchronous rectification designs.

This device is engineered to operate safely across a broad temperature range from -55°C to 150°C, ensuring durability in demanding environments including industrial and commercial electronics.

Compact dimensions of 3 mm length, 1.7 mm width, and 1 mm height in a surface-mount SOT-23 package make the FDC606P suitable for densely populated electronic assemblies.

Common applications include power management in consumer electronics, industrial power supplies, and other systems requiring efficient low-voltage power switching. The MOSFET supports switching in DC-DC converters, motor control circuits, and load switching.

Features PowerTrench technology for improved system efficiency and power density. Maximum continuous drain current of 6 amperes. Supports a maximum drain-source voltage of 12 volts. Encapsulated in a compact 6-pin SOT-23 surface-mount package.

Low maximum drain-source resistance of 53 milliohms for reduced power loss. Designed with an enhancement channel and shielded-gate structure for charge balance. Maximum power dissipation rating of 1.6 watts. Operates reliably between -55°C and 150°C.

Typical gate charge of 18 nanocoulombs at gate-source voltage. Soft reverse recovery body diode reduces switching losses in synchronous rectification. Explore a broad selection of discrete semiconductors and MOSFETs at EnvMart to match your industrial, laboratory, and commercial electronics needs.