onsemi PowerTrench Type P-Channel MOSFET 4.9A 30V Enhancement 6-Pin SOT-23 FDC610PZ

onsemi FDC610PZ PowerTrench Type P-Channel MOSFET is a high-performance enhancement mode MOSFET designed for discrete semiconductor applications. It features a maximum continuous drain current of 4.9A and a maximum drain source voltage rating of 30V, housed in a compact 6-pin SOT-23 surface mount package measuring 3mm length, 1.7mm width, and 1mm height.

The PowerTrench series employs a shielded-gate structure offering lower figure of merit (FOM) for improved efficiency compared to previous generations. The device's low maximum drain source resistance of 75mΩ minimizes conduction losses, benefiting power-sensitive electronic designs. It supports a maximum power dissipation of 1.6W and a typical gate charge of 17nC, facilitating fast switching in synchronous rectification and power supply circuits.

Rated to operate reliably from a minimum temperature of -55°C up to 150°C maximum, this MOSFET suits applications requiring dependable performance across wide thermal conditions. Its soft reverse recovery body diode reduces the need for external snubber circuits and helps in replacing higher voltage rating MOSFETs.

This MOSFET is widely suitable for use in industrial, electronic manufacturing, power management, and consumer electronics domains where efficient switching and compact size are priorities.

Surface mount 6-pin SOT-23 package for space-constrained layouts. Optimized power switching with PowerTrench technology. Enhancement mode P-Channel for reliable and efficient operation. Wide operating temperature range from -55°C to 150°C.

Fast switching capabilities with low gate charge. Durable construction suitable for various electronic applications. Effectively eliminates the need for snubber circuits with soft body diode. Explore more on semiconductor components in the Discrete Semiconductors category at EnvMart.