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onsemi PowerTrench N-Channel MOSFET 37 A 150 V Enhancement 3-Pin TO-263 FDB2552
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB2552 |
| Width | 11.33mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 97mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET operates with enhancement mode channel type for efficient switching.
- Maximum drain-source resistance (Rds) is 97 milliohms improving conduction efficiency.
- It supports a maximum power dissipation of 150 W for robust performance.
- Typical gate charge is 39 nanocoulombs at specified gate-source voltage of ±20 V.
- Wide operating temperature range from -55°C to 175°C suits demanding industrial environments.
- Its compact dimensions (10.67 mm length, 11.33 mm width, 4.83 mm height) optimize PCB space usage.
- Surface mount design facilitates automated assembly processes.
- The package count includes 3 pins compatible with standard TO-263 connectors.
Product Description
onsemi FDB2552 is a high-performance PowerTrench N-Channel MOSFET designed for industrial electronic applications requiring reliable and efficient switching.
This device supports up to 37 A continuous drain current and a maximum drain-source voltage of 150 V, making it suitable for power management circuits, DC-DC converters, and motor control systems.
The enhancement mode channel offers stable gate control while maintaining low on-resistance of 97 milliohms, resulting in reduced power loss and thermal dissipation. Its robust maximum power dissipation rating of 150 W and broad operational temperature range from -55°C to 175°C ensure dependable functionality even under harsh conditions.
With a standard 3-pin TO-263 surface mount package and compact physical dimensions of 10.67 mm by 11.33 mm by 4.83 mm, it integrates efficiently into circuit boards designed for industrial automation, manufacturing equipment, and power supply units.
This MOSFET operates with enhancement mode channel type for efficient switching. Maximum drain-source resistance (Rds) is 97 milliohms improving conduction efficiency. It supports a maximum power dissipation of 150 W for robust performance.
Typical gate charge is 39 nanocoulombs at specified gate-source voltage of ±20 V. Wide operating temperature range from -55°C to 175°C suits demanding industrial environments. Its compact dimensions optimize PCB space usage.
Surface mount design facilitates automated assembly processes. Compatible 3-pin TO-263 package for standard electronic assemblies. Typical applications include power management in automotive systems, industrial machinery control, consumer electronics, and renewable energy inverters.
Choose onsemi PowerTrench MOSFET FDB2552 for reliable semiconductor performance in high-current, high-voltage scenarios. Explore the wide range of semiconductor components available at EnvMart to support your industrial and laboratory electronics needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 37 A.
It supports a maximum drain-source voltage of 150 V.
The maximum power dissipation is rated at 150 W.
This model has dimensions of 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height.
The typical gate charge is 39 nanocoulombs at a specified gate-source voltage of ±20 V.
The maximum drain-source resistance (Rds) is 97 milliohms, which improves conduction efficiency.
It operates within a temperature range of -55°C to 175°C.
The FDB2552 comes in a standard 3-pin TO-263 surface mount package.
This model utilizes an enhancement mode N-channel type for efficient switching.
It is suitable for applications such as power management circuits, DC-DC converters, and motor control systems.
The maximum gate-source voltage is ±20 V.
The country of origin for this model is India.
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