Infineon N-Channel IGBT 40 A 1200 V 3-Pin TO-247 Through Hole IGW40T120FKSA1

Infineon IGW40T120FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring up to 40 A maximum continuous collector current and up to 1200 V collector-emitter voltage. Packaged in a 3-pin TO-247 through-hole form factor, it supports efficient heat dissipation and easy mounting for industrial use.

The transistor incorporates Infineon's TrenchStop technology which offers very low collector-emitter saturation voltage ensuring efficient power conversion and low conduction losses. The device features a maximum power dissipation rating of 270 W, a fast switching speed of 48 ns, and a maximum gate-emitter voltage rating of 20 V.

It is suitable for a wide range of power electronics applications such as motor drives, industrial inverters, power supplies, and other switching applications operating within a temperature range of -40°C to 150°C. The transistor meets environmental and performance standards including Pb-Free, RoHS compliance, and JEDEC1 certification.

TrenchStop technology for low saturation voltage and high efficiency. Maximum continuous collector current of 40 A for high load capability. Package type TO-247 with through-hole mounting for robust assembly. Fast switching speed of 48 ns for efficient power switching.

Wide operating temperature range from -40°C to 150°C ensures reliability. Complies with Pb-Free, RoHS, JEDEC1 environmental and quality standards.

This transistor is ideal for electronic industrial equipment manufacturing, power management systems, construction of inverters, and other demanding electrical applications. Its design supports reliable and efficient operation, making it a trustworthy component for engineers and designers focusing on energy efficiency and robust power switching.

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