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Infineon CoolMOS C3 N-Channel MOSFET, 16 A, 560 V Enhancement Mode, 3-Pin TO-247 SPW16N50C3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | SPW16N50C3FKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 560V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Designed in a 3-pin TO-247 package suitable for through-hole mounting.
- Operates with an enhancement-mode channel for efficient switching.
- Maximum power dissipation rating of 160 watts.
- Wide operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage of ±20 V ensures robustness in control applications.
- Low typical gate charge of 66 nC facilitates fast switching performance.
- Compact dimensions with height 21.1 mm, length 16.13 mm, and width 5.21 mm.
- Low maximum drain-source resistance of 280 mΩ aids in reducing conduction losses.
Product Description
Infineon SPW16N50C3FKSA1 is a CoolMOS C3 series N-Channel MOSFET transistor rated for a maximum continuous drain current of 16 amperes and a maximum drain-source voltage of 560 volts. Packaged in a 3-pin TO-247 through-hole mount, this enhancement-mode MOSFET is designed for high-efficiency power applications.
The device supports a maximum power dissipation of 160 watts and maintains operation within a temperature range from -55°C up to 150°C, ensuring reliability under various industrial conditions. The maximum gate-source voltage rating of ±20 volts provides safe operating margins for driving circuits.
Featuring a typical gate charge of 66 nanocoulombs and a low maximum drain-source resistance of 280 milliohms, the SPW16N50C3FKSA1 delivers fast switching capabilities and minimized conduction losses essential for power conversion and motor control.
Its compact physical form factor, measuring 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width, facilitates easy integration into electronic assemblies. This MOSFET is ideal for use in industrial power supplies, converters, inverters, and other discrete semiconductor applications where high voltage and current efficiency are critical.
Designed in a 3-pin TO-247 package for through-hole mounting. Supports continuous drain current up to 16 A with 560 V maximum voltage rating. Enhancement-mode N-Channel MOSFET for high-performance power switching. Maximum power dissipation of 160 W ensures thermal robustness.
Wide temperature range from -55°C to 150°C for demanding environments. Low gate charge (66 nC) for efficient switching energy use. Compact dimensions enable versatile application integration. Low Rds(on) reduces conduction losses in high current applications.
Suitable for industrial power management and electronic component use cases. Explore the wide range of Infineon MOSFETs in the EnvMart Industrial Electronics category for precision power control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 amperes.
It has a maximum drain-source voltage rating of 560 volts.
The maximum power dissipation capacity is rated at 160 watts.
This MOSFET operates within a temperature range from -55°C to 150°C.
The typical gate charge is 66 nanocoulombs.
The maximum gate-source voltage is ±20 volts.
The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
It is packaged in a 3-pin TO-247 configuration suitable for through-hole mounting.
The maximum drain-source resistance is 280 milliohms.
This model uses an N-channel configuration with enhancement mode.
This MOSFET is suitable for industrial power supplies, converters, inverters, and other discrete semiconductor applications.
The pin count for this MOSFET is 3.
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