Infineon SIPMOS Type P-Channel MOSFET 80A Continuous Drain Current 60V Drain Source Voltage 3-Pin TO-263 SPB80P06PGATMA1

Infineon SPB80P06PGATMA1 is a P-Channel enhancement type MOSFET designed specifically for demanding automotive and industrial power switching applications. It supports a high continuous drain current of 80 amperes and can tolerate drain-source voltages up to 60 volts, making it suitable for medium-voltage power systems.

The device is housed in a TO-263 package intended for surface mounting, which facilitates efficient thermal transfer to printed circuit boards, allowing it to operate under high power dissipation of up to 340 watts. With a low Rds(on) of 23 milliohms, this MOSFET reduces conduction losses, improving energy efficiency.

The SPB80P06PGATMA1 operates over a broad temperature range from -55 degrees Celsius to 175 degrees Celsius, ensuring reliable performance in harsh environments. It complies with the AEC-Q101 automotive qualification standard, underscoring its suitability for automotive electronic control units and power distribution modules.

Featuring a maximum gate-source voltage rating of ±20 volts and a typical gate charge of 115 nanocoulombs, it supports predictable and energy-efficient switching. Its 3-pin configuration simplifies integration into half-bridge circuits, synchronous rectifiers, motor drivers, and DC-DC converter output stages.

Typical applications include use in automotive power distribution systems, motor drive switching, and DC-DC converter output stages requiring high current handling and robust thermal endurance. The surface mount TO-263 package design supports high-current routing and efficient heat dissipation.

Capable of continuous 80A drain current for high load demands. 60V maximum drain-source voltage suitable for medium-voltage systems. Low 23mΩ drain-source resistance reduces conduction losses. Supports up to 340W power dissipation for sustained operation.

Enhancement mode P-channel configuration for efficient switching. Wide operating temperature range from -55°C to 175°C for robust thermal performance. 3-pin TO-263 surface-mount package enables effective thermal management.

Maximum gate-source voltage of ±20V for safe gate drive circuitry design. Meets AEC-Q101 automotive standards for high reliability. Typical 115nC gate charge allows controlled switching energy usage. Explore more Infineon MOSFET products and related semiconductor components suitable for industrial, automotive, and power management applications at EnvMart.