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Infineon SIPMOS Type P-Channel MOSFET 11.3 A Continuous Drain Current 100 V Drain Source Voltage SPP15P10PLHXKSA1
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | SPP15P10PLHXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11.3A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 128W |
| Typical Gate Charge Qg @ Vgs | 47nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.96V |
Key Features
- Enhancement mode MOSFET with Type P channel for robust switching.
- Maximum power dissipation of 128 W supporting high efficiency.
- Typical gate charge of 47 nC at Vgs ensures fast switching performance.
- Wide operating temperature from -55°C to 175°C for harsh environments.
- Automotive grade AEC-Q101 standard qualified for reliability in demanding applications.
- Through-hole mount type simplifies PCB implementation and thermal management.
- Low maximum drain-source resistance of 270 mΩ minimizes conduction losses.
- Maximum gate-source voltage rating of ±20 V for enhanced control headroom.
Product Description
Infineon SPP15P10PLHXKSA1 is a SIPMOS® Type P-Channel Enhancement Mode MOSFET designed for robust switching applications requiring up to 11.3 A continuous drain current and 100 V drain-source voltage rating. Packaged in a TO-220 3-pin through-hole form factor, this device supports power dissipation up to 128 W, enabling high efficiency and thermal performance in power management, automotive, telecommunications, and eMobility sectors.
The transistor features a low maximum drain-source resistance of 270 mΩ which contributes to reduced conduction losses and enhanced energy efficiency. Its typical gate charge of 47 nC at gate threshold voltage (Vgs) ensures rapid switching capabilities, making it suitable for DC/DC converters and other fast switching circuits.
Operating safely across a wide temperature range from -55°C to 175°C and meeting the AEC-Q101 automotive qualification standard, this MOSFET is engineered for demanding industrial and automotive environments. The device's gate-source voltage tolerance of ±20 V offers resilience in various circuit conditions. The package dimensions (Length: 10.36 mm, Width: 4.57 mm, Height: 15.95 mm) facilitate straightforward PCB mounting with effective heat dissipation pathways.
Compliance with Pb-free lead plating and RoHS directives aligns with global environmental standards, underscoring Infineon's dedication to sustainable manufacturing practices. This high-performance MOSFET is ideal for applications in power electronics, industrial controls, automotive electronic controls, and telecommunications equipment.
Enhancement mode P-Channel MOSFET for efficient power switching. High continuous drain current capability of 11.3 A ensures sustained performance under load. Maximum drain-source voltage of 100 V suits mid-voltage applications.
Automotive AEC-Q101 compliance assures reliability in harsh operating environments. Low Rds(on) and fast switching times improve system efficiency. Three-pin TO-220 package provides easy mounting and thermal management. Wide operating temperature range from cold to high heat applications.
RoHS compliant and environmentally friendly lead plating. Designed for telecommunications, eMobility, automotive, and general industrial use. Explore more Infineon discrete semiconductor solutions and ensure high efficiency and reliability in your industrial and automotive electronic system designs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the SPP15P10PLHXKSA1 is 11.3 A.
This model has a maximum drain-source voltage rating of 100 V.
It supports a maximum power dissipation of 128 W, enabling high efficiency in applications.
The SPP15P10PLHXKSA1 is packaged in a TO-220 form factor and features a through-hole mount type.
The typical gate charge at gate threshold voltage (Vgs) is 47 nC.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 15.95 mm in height.
It operates safely across a wide temperature range from -55°C to 175°C.
The device meets the AEC-Q101 automotive qualification standard for reliability in demanding applications.
This model has a maximum gate-source voltage rating of ±20 V.
The maximum drain-source resistance is 270 mΩ, which helps minimize conduction losses.
It is suitable for applications in power management, automotive, telecommunications, and eMobility sectors.
This device features a Type P channel, designed for enhancement mode operation.
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