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Infineon SIPMOS N-Channel MOSFET 350 mA 240 V Depletion 4-Pin SOT-223 BSP129H6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.6mm
Length 6.5mm
Model BSP129H6327XTSA1
Width 3.5mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 350mA
Maximum Drain Source Voltage Vds 240V
Maximum Drain Source Resistance Rds 20Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 3.8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET has a depletion mode channel type for precise conduction control.
  • Maximum drain-source resistance is 20 ohms to ensure predictable on-state behavior.
  • Typical gate charge at Vgs is 3.8 nanocoulombs allowing efficient switching performance.
  • Operates reliably between temperatures of -55°C to 150°C, suitable for automotive applications.
  • The compact 4-pin SOT-223 package supports surface mounting with effective thermal management.
  • Maximum power dissipation is 1.8 watts, enabling moderate thermal loading in electronic circuits.
  • Forward voltage drop of 1.2 volts ensures low-voltage conduction losses.
  • AEC-Q101 automotive standard certification guarantees quality for automotive subsystems.

Product Description

Infineon BSP129H6327XTSA1 is a SIPMOS Series N-Channel MOSFET with a maximum continuous drain current of 350 mA and a high drain-source voltage rating of 240 V. This depletion mode device operates in the temperature range of -55°C to 150°C, making it suitable for demanding industrial and automotive electronic applications.

The device features a surface-mount 4-pin SOT-223 package that facilitates compact PCB assembly while allowing effective heat dissipation. The typical gate charge is 3.8 nC at specified gate voltage, providing efficient switching speed and EMI control.

With a maximum drain-source resistance of 20 ohms, the transistor provides predictable on-state conduction behavior, making it ideal for low-current power rails, control circuitry, and board-level power conditioning modules.

Its power dissipation capability of 1.8 W requires careful thermal layout and the use of thermal pads or copper areas on the PCB to maintain junction temperature under the specified limits.

This MOSFET meets AEC-Q101 automotive standards, making it highly reliable for automotive subsystem switching functions, battery-management peripherals, and thermal management in compact surface-mount electronic assemblies.

This MOSFET supports high-voltage switching applications up to 240 V. Continuous drain current of 350 mA is suitable for low-power load control. Minimal forward voltage drop enhances energy efficiency in conduction. Compatible with advanced thermal management techniques in electronic design.

Four-pin SOT-223 package supports reliable surface mounting and heat dissipation. Automotive-grade qualification ensures usage in vehicle electronic systems. Robust electrical performance over a wide operating temperature range between -55°C and 150°C.

Infineon products are globally recognized for quality and consistency, making the BSP129H6327XTSA1 MOSFET a dependable choice for engineers and designers in industrial, automotive, and electronic manufacturing sectors.

Explore additional Infineon semiconductor devices and components on EnvMart for comprehensive electronic solutions.

Infineon SIPMOS N-Channel MOSFET 350 mA 240 V Depletion 4-Pin SOT-223 BSP129H6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for the BSP129H6327XTSA1 is 350 mA.

This model has a maximum drain-source voltage rating of 240 V.

It operates reliably between temperatures of -55°C to 150°C.

The maximum power dissipation for this MOSFET is 1.8 watts.

The typical gate charge at Vgs is 3.8 nanocoulombs.

It comes in a compact 4-pin SOT-223 package suitable for surface mounting.

The forward voltage drop is 1.2 volts, which helps in reducing conduction losses.

It meets the AEC-Q101 automotive standard certification.

The maximum drain-source resistance is 20 ohms, ensuring predictable on-state behavior.

The height of the BSP129H6327XTSA1 is 1.6 mm.

The width is 3.5 mm and the length is 6.5 mm.

Yes, it is suitable for automotive applications due to its AEC-Q101 certification and reliable performance.

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