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Infineon SIPMOS N-Channel MOSFET 120mA 600V Enhancement 4-Pin SOT-223 BSP125H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 6.5mm |
| Model | BSP125H6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 45Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- Supports high-voltage switching with 600V drain-source rating.
- Features a low 45Ω maximum drain-source resistance for reduced leakage.
- Typical gate charge of 4.4nC enables fast gate transitions.
- Maximum power dissipation rating of 1.8W for modest power handling.
- Operates reliably from -55°C to 150°C temperature range.
- Enclosed in a 4-pin SOT-223 surface mount package for PCB reflow assembly.
- Forward voltage of 0.8V minimizes conduction loss in diode path.
- Meets AEC-Q101 automotive quality standard for robustness.
Product Description
Infineon BSP125H6327XTSA1 SIPMOS N-Channel MOSFET is a high-voltage, surface-mounted switching device designed for demanding power applications requiring robust performance and reliability. It offers a maximum continuous drain current of 120mA and a high drain-source voltage rating of 600V, enabling effective switching in automotive, industrial, and power supply circuits.
The 4-pin SOT-223 package facilitates automated PCB assembly, supporting reflow soldering processes commonly used in modern electronics manufacturing. The device's enhancement mode operation, combined with a low maximum drain-source resistance of 45Ω, reduces leakage current during off states, improving thermal efficiency and reducing power loss.
Its typical gate charge of 4.4nC allows fast switching, ensuring efficient control in switching applications. Furthermore, a maximum power dissipation of 1.8W provides adequate thermal handling for low-power stages. The MOSFET is rated to operate reliably across an extended temperature range from -55°C to 150°C, making it suitable for harsh automotive and industrial environments.
The device includes a forward voltage drop of 0.8V on the diode path, minimizing conduction losses. Designed according to the AEC-Q101 standard, it assures quality and performance required for automotive auxiliary circuits, as well as small motor driver protection, battery management, and input-stage switching in power supplies.
Typical applications include automotive high-voltage auxiliary circuits, industrial sensor interfaces that require isolation, and battery charging subsystems. Its surface-mount package type and robust specifications make it versatile for use in various industrial and transportation electronic systems.
Supports high-voltage switching with 600V drain-source rating. Features a low 45Ω maximum drain-source resistance for reduced leakage. Typical gate charge of 4.4nC enables fast gate transitions. Maximum power dissipation rating of 1.8W for modest power handling.
Operates reliably from -55°C to 150°C temperature range. Enclosed in a 4-pin SOT-223 surface mount package for PCB reflow assembly. Forward voltage of 0.8V minimizes conduction loss in diode path. Meets AEC-Q101 automotive quality standard for robustness.
Ideal for automotive auxiliary circuits and industrial sensor interfaces. Explore more Infineon MOSFETs and semiconductor components in EnvMart's Electronics category for high quality and industrial-grade power switching solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120mA.
It has a drain-source voltage rating of 600V, suitable for high-voltage applications.
This model is enclosed in a 4-pin SOT-223 surface mount package, designed for automated PCB assembly.
The typical gate charge is 4.4nC, enabling fast gate transitions.
The maximum power dissipation rating for this unit is 1.8W, allowing for modest power handling.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 45Ω, which helps reduce leakage current.
It meets the AEC-Q101 automotive quality standard, ensuring robustness for automotive applications.
The forward voltage drop is 0.8V, which minimizes conduction losses.
The dimensions are 6.5mm in length, 3.5mm in width, and 1.5mm in height.
This model is suitable for automotive high-voltage auxiliary circuits and industrial sensor interfaces that require isolation.
The channel type is N-channel, designed for enhancement mode operation.
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