Infineon SIPMOS N-Channel MOSFET 350 mA 240 V Enhancement Mode 4-Pin SOT-223 BSP89H6327XTSA1

Infineon BSP89H6327XTSA1 is a SIPMOS N-Channel MOSFET designed for switching applications requiring high voltage and moderate current capability. This component supports 350 mA continuous drain current and withstands up to 240 V drain-source voltage.

Its enhancement mode technology with low gate threshold voltage makes it highly sensitive and suitable for logic-level applications. The device is enclosed in a 4-pin SOT-223 surface mount package, enabling compact and efficient PCB design integration.

Rated for power dissipation up to 1.8 W, it handles thermal loads effectively under typical operating conditions. The MOSFET functions reliably in environments ranging from -55°C to 150°C, meeting the stringent demands of automotive and industrial applications, including power management and signal amplification circuits.

The AEC-Q101 automotive standard compliance ensures robustness and durability for automotive electronics uses. Forward voltage is specified at 1.1 V, with a maximum gate-source voltage rating of -20 to +20 V, supporting versatile control schemes. Pulsed drain currents up to 1.4 A are supported, enabling handling of transient loads.

Key electrical parameters such as a maximum drain-source resistance of 6 Ω and a typical gate charge of 4.3 nC optimize switching performance and efficiency. Its low gate threshold and logic-level compatibility facilitate direct interfacing with microcontrollers and digital control units in embedded designs.

Supports 350 mA continuous drain current and 240 V drain-source voltage. Enhancement mode N-Channel MOSFET with a low gate threshold for sensitive switching. Compact 4-pin SOT-223 surface mount package for space-efficient PCB layouts.

Thermal dissipation capacity up to 1.8 W supports stable operation. Wide operating temperature from -55°C to 150°C suitable for automotive and industrial use. Automotive standard compliance (AEC-Q101) for reliable performance.

Logic-level device compatible with microcontroller interfaces. Capable of pulsed currents up to 1.4 A for transient load management. Forward voltage rating of 1.1 V and gate-source voltage tolerance from -20 V to +20 V.

This MOSFET is ideal for automotive power management, switching power supplies, and signal amplification in electronic circuits. It ensures efficient switching and stable operation in high-voltage electronics environments.

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