Infineon CoolMOS C3 N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 SPW35N60C3FKSA1

Infineon SPW35N60C3FKSA1 is a high-performance CoolMOS C3 N-Channel MOSFET tailored for robust industrial, electronic, and power management applications. Designed for enhancement mode operation, this transistor supports continuous drain currents up to 34 amperes and withstands drain-source voltages up to 650 volts, making it reliable for demanding power switching tasks.

The device comes in a 3-pin TO-247 package constructed for through-hole mounting, providing excellent thermal management suitable for high-power dissipation up to 313 watts. Its low maximum drain-source resistance of 100 milliohms ensures efficiency gains by minimizing conduction losses.

Operating over an extensive temperature range from -55°C to 150°C, it is engineered to function reliably in harsh industrial and automotive environments despite not being automotive standard qualified. The maximum gate-source voltage rating of -20 to +20 volts allows flexible gate drive configurations, while the typical gate charge of 150 nanocoulombs provides fast switching capabilities, optimizing power conversion efficiency.

With compact physical dimensions of 16.13 mm length, 5.21 mm width, and 21.1 mm height, the SPW35N60C3FKSA1 MOSFET is suitable for integration into dense PCB designs and power modules. Its forward voltage of 1.2 volts adds to predictable conduction characteristics important for circuit design engineers.

This product is ideal for use in industrial power electronics, power supply units, motor drives, and electronic converters where efficiency, high voltage, and current handling are critical.

Supports a maximum continuous drain current of 34 amperes ensuring robust current handling. Operates with a maximum drain-source voltage of 650 volts for high-voltage circuits. Features a 3-pin TO-247 package optimized for through-hole mounting and heat dissipation.

Offers a maximum power dissipation of 313 watts for reliable high-power performance. Designed with enhancement mode channel and a low drain-source resistance of 100 milliohms for efficiency. Wide operating temperature range from -55°C to 150°C suitable for industrial environments.

Maximum gate-source voltage rating of -20 to +20 volts provides flexible gate drive conditions. Typical gate charge of 150 nanocoulombs improves switching speed and reduces losses. Compact dimensions with length 16.13 mm, width 5.21 mm, and height 21.1 mm enable easy integration.

Explore the wide range of high-quality MOSFETs and discrete semiconductors in the Infineon product line available on EnvMart for efficient, reliable industrial and electronic system design.