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DiodesZetex General Purpose NPN Bipolar Transistor 2 A 20 V SOT-23 ZXTN25020DFLTA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 3.05mm
Length 0.53mm
Model ZXTN25020DFLTA
Mount Type Surface
Series ZXTNX
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 350mW
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 215MHz

Key Features

  • Equipped with a 3-pin SOT-23 surface mount package for compact PCB designs.
  • Offers a high maximum collector base voltage of 100 V suitable for versatile circuit applications.
  • Operates reliably over a wide temperature range from -55°C to 150°C.
  • Features a maximum power dissipation of 350 mW ensuring stable performance.
  • Delivers a transition frequency of up to 215 MHz supporting high-frequency applications.
  • Has a minimum DC current gain (hFE) of 80 for effective amplification.
  • Designed for single transistor configuration with NPN polarity for general switching and amplification.
  • Manufactured to quality standards with origin stated as China.

Product Description

DiodesZetex ZXTN25020DFLTA is a general purpose NPN bipolar transistor designed for switching and amplifier applications. It supports a maximum DC collector current of 2 A and can withstand a collector-emitter voltage of up to 20 V, housed in a compact 3-pin SOT-23 surface mount package suitable for modern electronics assembly.

This transistor has a maximum collector base voltage rating of 100 V and a maximum emitter base voltage of 7 V, enabling it to function effectively in diverse electronic circuit configurations. It offers stable operation across a temperature range from -55°C to 150°C, making it ideal for industrial, commercial, and consumer electronic devices subject to varying environmental conditions.

With a maximum power dissipation of 350 mW and a transition frequency of 215 MHz, the ZXTN25020DFLTA supports moderate power electronic applications, including high-frequency switching and amplification. Its minimum current gain hFE of 80 ensures reliable amplification performance in signal processing tasks.

The device is constructed with a single transistor configuration and NPN transistor polarity, meeting general purpose design requirements for electronic circuit designers. It does not hold specific automotive standards or special approvals but is manufactured according to standard quality controls. The country of origin is China.

Compact SOT-23 package suitable for surface mount technology. Maximum collector current 2 A enabling moderate power handling. Wide operating temperature range from -55°C to 150°C. High transition frequency of 215 MHz for high-speed switching.

NPN polarity supports versatile transistor circuit applications. Moderate power dissipation rating of 350 mW for stability. Maximum collector base voltage of 100 V for robust performance. Reliable manufacturing origin from China.

This transistor is widely used in electronic component assemblies in industrial automation, communications, consumer electronics, and prototyping. The compact form factor and electrical parameters make it suitable for applications requiring balanced current and voltage capabilities. Explore additional Bipolar Transistors and discrete semiconductors in the Electronics & Electricals category at EnvMart for complementary parts and design options.

DiodesZetex General Purpose NPN Bipolar Transistor 2 A 20 V SOT-23 ZXTN25020DFLTA
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Frequently Asked Questions

The maximum DC collector current for the ZXTN25020DFLTA is 2 A, allowing it to handle moderate power applications effectively.

It has a maximum transition frequency of 215 MHz, making it suitable for high-speed switching applications.

This transistor can withstand a maximum collector-emitter voltage of 20 V, suitable for various circuit configurations.

The ZXTN25020DFLTA operates reliably over a wide temperature range from -55°C to 150°C.

It is housed in a compact 3-pin SOT-23 surface mount package, ideal for modern electronics assembly.

The maximum power dissipation for this transistor is 350 mW, ensuring stable performance in applications.

It has a minimum DC current gain (hFE) of 80, which is effective for amplification tasks.

The maximum collector base voltage rating is 100 V, providing robust performance in various applications.

This model features NPN polarity, suitable for general switching and amplification applications.

The dimensions of the ZXTN25020DFLTA are 3.05 mm in height and 0.53 mm in length.

It is widely used in industrial automation, communications, consumer electronics, and prototyping due to its electrical parameters and compact form factor.

The ZXTN25020DFLTA is manufactured in China, adhering to standard quality controls.

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