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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 1.8mm |
| Model | BAT43WS-7-F |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | BAT43WS |
| Maximum Operating Temperature | 125°C |
| Package Type | SOD-323 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 200mA |
| Peak Reverse Repetitive Voltage Vrrm | 30V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 100μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A |
| Maximum Forward Voltage Vf | 450mV |
| Peak Reverse Recovery Time trr | 5ns |
DiodesZetex BAT43WS-7-F is a high-performance surface mount switching diode designed with Schottky barrier technology, providing low forward voltage and high thermal stability. This 2-pin diode housed in a compact SOD-323 package is optimized for use in discrete semiconductor applications requiring efficient switching functions.
With a maximum continuous forward current rating of 200 mA and a peak reverse repetitive voltage of 30 V, this device ensures reliable protection and operation in electronic circuits. Its low forward voltage drop of 450 mV minimizes power dissipation, improving energy efficiency. The diode exhibits a peak forward surge current of 4 A, which accommodates transient spikes without damage.
Designed for robust thermal performance, the diode operates across a wide temperature range from -55°C to 125°C. Its compact footprint of 1.8 mm length, 1.4 mm width, and 1.1 mm height allows for high-density PCB layouts. The device features a fast peak reverse recovery time of 5 ns, making it ideal for high-frequency and switching regulator circuits.
The BAT43WS-7-F diode is manufactured in China and is suitable for industrial, scientific, and commercial electronic applications, including power management, rectification, and signal processing within semiconductor systems.
This diode offers a maximum continuous forward current of 200 mA. It provides a peak reverse repetitive voltage of 30 V for reliable blocking capabilities. The forward voltage drop is low at 450 mV ensuring efficient conduction.
Peak reverse current is minimal at 100 μA, enhancing low leakage performance. The device features a peak forward surge current of 4 A for transient protection. It operates effectively in temperature ranges from -55°C to 125°C.
Compact dimensions of 1.8 mm length, 1.4 mm width, and 1.1 mm height enable space-saving PCB design. Peak reverse recovery time is swift at 5 ns, suitable for high-speed switching applications. Manufactured in China, this diode is ideal for modern electronic semiconductor applications.
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