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DiodesZetex 30 V 500 mA Schottky Barrier Diode 2-Pin SOD-123 Package B0530W-7-F

Category Schottky Diodes & Rectifiers Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model B0530W-7-F
Width 1.7mm
Mount Type Surface
Series B0530W
Maximum Operating Temperature 125°C
Package Type SOD-123
Minimum Operating Temperature -65°C
Standards/Approvals FBI
Pin Count 2
Maximum Continuous Forward Current If 500mA
Peak Reverse Repetitive Voltage Vrrm 30V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 130μA
Peak Non-Repetitive Forward Surge Current Ifsm 5.5A
Maximum Forward Voltage Vf 430mV

Key Features

  • The diode supports a maximum continuous forward current of 500 mA.
  • It has a peak reverse repetitive voltage of 30 V and a maximum forward voltage of 430 mV.
  • The device exhibits a low peak reverse current of 130 μA for efficient operation.
  • Suitable for operating temperatures from -65°C to 125°C ensuring robust thermal stability.
  • The Schottky diode configuration provides high switching speed and low power loss.
  • Designed with a compact SOD-123 package, dimensions include length 2.85 mm, width 1.7 mm, and height 1.35 mm.
  • Capable of handling peak non-repetitive forward surge current of 5.5 A.
  • Manufactured in China with compliance to FBI standards.

Product Description

DiodesZetex B0530W-7-F is a high-performance Schottky Barrier Diode designed for efficient rectification and switching in various electronic circuits. Featuring a maximum continuous forward current of 500 mA and peak reverse voltage of 30 V, this diode provides excellent thermal stability and reliability in compact SOD-123 surface mount packaging.

The low forward voltage drop of 430 mV ensures minimal power loss, making it suitable for power supplies, high-frequency switching applications, and voltage clamping. It operates efficiently at temperatures ranging from -65°C to 125°C, suitable for industrial, telecommunications, and automotive auxiliary circuits where fast recovery and thermal endurance are critical.

This two-pin diode provides a peak non-repetitive surge current rating of 5.5 A enabling the device to withstand transient events typical in power circuits. Its small dimensions - length 2.85 mm, width 1.7 mm, and height 1.35 mm - allow easy PCB layout integration in compact designs.

The Schottky diode possesses a very low leakage current of 130 μA at peak reverse voltage, enhancing its switching efficiency. The diode's features include high switching speed, low forward voltage, and excellent thermal stability.

Its surface mount SOD-123 package is optimized for automated assembly and production efficiency. It is suitable for use in industrial electronics, power management systems, and general semiconductor applications.

This product is a reliable choice for designers seeking a cost-effective Schottky diode with robust electrical characteristics and compact form factor. Environmentally conscious designs benefit from RoHS compliance and certificate availability.

Explore more electronics components and semiconductors in the Schottky Diodes & Rectifiers category on EnvMart for compatible parts and accessories.

Explore more products in our Schottky Diodes & Rectifiers category.

DiodesZetex 30 V 500 mA Schottky Barrier Diode 2-Pin SOD-123 Package B0530W-7-F
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Frequently Asked Questions

The maximum continuous forward current of this diode is 500 mA.

This model has a peak reverse repetitive voltage rating of 30 V.

The maximum forward voltage drop for this diode is 430 mV.

The dimensions of the SOD-123 package are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height.

It operates efficiently within a temperature range of -65°C to 125°C.

The peak non-repetitive forward surge current rating is 5.5 A.

This diode uses a single Schottky configuration.

The peak reverse current is 130 μA.

It features a surface mount design.

This model complies with FBI standards.

It is suitable for use in power supplies, high-frequency switching applications, and voltage clamping.

This diode is manufactured in China.

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