onsemi PowerTrench Dual P-Channel MOSFET, Isolated, 2.9 A Continuous Drain Current, 30 V Drain Source Voltage FDMA3023PZ

onsemi FDMA3023PZ is a Dual P-Channel MOSFET transistor featuring isolated PowerTrench technology, designed for efficient power management applications. The device supports a maximum continuous drain current of 2.9 A and a drain source voltage rating of 30 V, making it suitable for switching and amplification in high-density electronic systems.

This MOSFET is packaged in a compact 6-pin MLP surface-mount package measuring 2 mm in length, 2 mm in width, and a height of 0.75 mm, which allows efficient PCB space utilization. The enhancement-mode transistor configuration includes two elements per chip, providing dual channels optimized for performance.

PowerTrench technology improves system efficiency by reducing gate charge (7.9 nC), lowering reverse recovery charge, and featuring a soft reverse recovery body diode that enhances fast switching in synchronous rectification designs often used in AC/DC power supplies.

The device operates reliably within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics environments. Its maximum drain source resistance of 240 mΩ further contributes to energy efficiency and reduced heat dissipation.

Typical applications include power management switching, synchronous rectifiers, and general-purpose amplification in electronic circuits. The isolated dual-channel design and small footprint support integration in compact and high-performance electronic assemblies.

Type P channel designed for amplification and switching applications. Maximum continuous drain current is 2.9 amperes. Maximum drain source voltage is 30 volts. PowerTrench technology ensures low power dissipation and enhanced efficiency.

Compact 6-pin MLP package suitable for surface mounting. Low typical gate charge of 7.9 nC for fast switching capability. Operates reliably between -55°C to 150°C. Maximum drain source resistance of 240 milliohms minimizes conduction loss.

Enhanced mode transistor configuration with isolated dual elements per chip. Robust construction with dimensions 2 mm x 2 mm x 0.75 mm for space-saving designs.

This product is intended for industrial, electronic component manufacturing, power supply design, automotive electronics, telecommunications, and equipment repair sectors. For users seeking efficient MOSFET solutions with enhanced switching performance, the FDMA3023PZ provides a reliable and compact component.

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