onsemi UniFET N-Channel MOSFET 11.5 A 500 V Enhancement Mode 3-Pin TO-220F FDPF12N50NZ

onsemi FDPF12N50NZ UniFET N-Channel MOSFET is a high-performance transistor suitable for power switching applications in industrial and electronic equipment. It supports a continuous drain current of up to 11.5 A and can withstand a maximum drain-source voltage of 500 V, making it ideal for power factor correction, electronic ballasts, and renewable energy systems.

Constructed with enhancement mode channel technology, this MOSFET provides superior switching speed and efficiency. The device is housed in a TO-220F package with through-hole mounting and three pins, facilitating easy integration on printed circuit boards.

The MOSFET exhibits low on-resistance of 520 milliohms, reducing conduction losses and improving overall device efficiency. It is rated for maximum power dissipation of 42 W, indicating robust thermal handling capabilities for demanding industrial environments.

Its maximum gate-source voltage rating of -25 to +25 V allows strong gate control for reliable switching. The typical gate charge of 23 nC supports rapid switching transitions, beneficial in high-frequency applications.

The device operates reliably over a temperature range from -55°C to 150°C, providing versatility in various climatic conditions. Forward voltage drop of 1.4 V helps minimize power dissipation during conduction.

Dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width make it a compact solution for space-constrained designs. The product is manufactured in China under onsemi quality standards.

Commonly utilized in industrial power converters, electronic ballasts, and switching power supplies, this MOSFET is an essential component for efficient power management in electronics, laboratory equipment, and manufacturing systems.

This MOSFET uses enhancement mode for efficient switching performance. It features a TO-220F package with 3 pins and through-hole mounting. Maximum drain-source resistance is 520 milliohms ensuring low power loss. Operating temperature ranges from -55°C to 150°C for reliable performance.

The device is equipped with a typical gate charge of 23 nC for fast switching. Maximum power dissipation is rated at 42 W for robust thermal handling. Maximum gate-source voltage ranges between -25 and +25 V. Forward voltage drop is 1.4 V minimizing conduction losses.

Compact dimensions: 16.07 mm height, 10.36 mm length, and 4.9 mm width. Country of origin is China, ensuring quality manufacturing standards. Explore more electronic components and MOSFET products in the Electronics & Electricals category at EnvMart.

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