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onsemi PowerTrench N-Channel MOSFET, 35 A, 150 V Enhancement Mode, 8-Pin WDFN Package FDMS86200

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 5mm
Model FDMS86200
Width 6mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type WDFN
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 35A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 34mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 104W
Typical Gate Charge Qg @ Vgs 33nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features enhancement mode operation for efficient switching performance.
  • The device includes a low maximum drain-source resistance of 34 mΩ for reduced conduction losses.
  • Maximum power dissipation is rated at 104 W, suitable for power management applications.
  • Compact package dimensions of 5 mm length, 6 mm width, and 1.05 mm height enable high-density PCB layouts.
  • Wide operating temperature range from -55°C to 150°C supports industrial and automotive environments.
  • The gate charge is 33 nC at Vgs, allowing fast switching response.
  • Maximum gate-source voltage ratings of -20 V to +20 V ensure robust gate protection.
  • Forward voltage is 1.2 V, contributing to efficient performance in switching applications.

Product Description

onsemi FDMS86200 is a PowerTrench N-Channel MOSFET designed for high current and voltage operation with a maximum continuous drain current of 35 A and drain-source voltage of 150 V. The device comes in a compact 8-Pin WDFN surface mount package measuring 5 mm in length and 6 mm in width, with a height of 1.05 mm, making it suitable for modern electronic assemblies.

This enhancement mode MOSFET features a low maximum drain-source resistance of 34 mΩ, providing efficient switching with minimal conduction losses. It supports a maximum power dissipation of 104 W and operates reliably across a wide temperature range from -55°C up to 150°C, making it well-suited for industrial, automotive, and power management applications.

The transistor's gate charge of 33 nC at gate-source voltage ensures responsive switching performance, supported by robust maximum gate-source voltage limits of -20 V to +20 V which protect the device during transient conditions. The forward voltage of 1.2 V optimizes energy efficiency during conduction.

Applications for the FDMS86200 include power conversion circuits, motor drivers, and DC-DC converters, fulfilling demanding industrial, commercial, and automotive electrical system needs. The surface mount format facilitates easy integration into compact PCBs while maintaining thermal management efficiency.

This MOSFET caters to applications requiring high power and voltage handling capabilities. Its PowerTrench series design optimizes thermal and electrical performance. Compact WDFN 8-pin package supports space-saving designs.

Wide temperature endurance suits harsh industrial environments. Low on-resistance minimizes power losses in switching circuits. Gate charge specification supports efficient high-frequency switching. Strong gate voltage tolerance increases device reliability.

Explore more PowerTrench MOSFETs and semiconductor components from onsemi and suppliers at EnvMart for industrial, laboratory, automated manufacturing, and automotive applications.

onsemi PowerTrench N-Channel MOSFET, 35 A, 150 V Enhancement Mode, 8-Pin WDFN Package FDMS86200
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Frequently Asked Questions

The maximum continuous drain current for this model is 35 A.

This MOSFET has a maximum drain-source voltage rating of 150 V.

The dimensions of this unit are 5 mm in length, 6 mm in width, and 1.05 mm in height.

The maximum power dissipation for this model is rated at 104 W.

The typical gate charge at Vgs for this MOSFET is 33 nC.

The maximum gate-source voltage ratings for this device are -20 V to +20 V.

This MOSFET operates within a temperature range of -55°C to 150°C.

The maximum drain-source resistance for this model is 34 mΩ.

This model comes in an 8-Pin WDFN surface mount package.

This device is an N-channel MOSFET.

This MOSFET is suitable for power conversion circuits, motor drivers, and DC-DC converters.

This model belongs to the PowerTrench series.

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