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| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | C3M0065090D |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | C3M |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 30.4nC |
| Maximum Gate Source Voltage Vgs | -8, +18V |
| Forward Voltage Vf | 4.4V |
Wolfspeed C3M0065090D is a high-performance N-Channel Silicon Carbide (SiC) Power MOSFET designed for power switching applications requiring high voltage, current capacity, and efficiency. Featuring an enhancement-mode channel, it supports a continuous drain current of 36 A and withstands a maximum drain-source voltage of 900 V.
This device is housed in a durable TO-247 through-hole package with three pins, facilitating straightforward integration into industrial and automotive circuits. The maximum power dissipation rating is 125 W, suitable for demanding power management tasks.
The MOSFET’s low on-resistance (78 mΩ) contributes to reduced conduction losses, enhancing overall system efficiency. Its typical gate charge of 30.4 nC enables fast switching speed, which, combined with a maximum gate-source voltage rating from -8 V to +18 V, allows for flexible and reliable drive control.
Operating temperature range from −55°C to +150°C ensures dependable performance under harsh environmental conditions. Physical dimensions are 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height, making it compact for varied uses.
The Wolfspeed C3M series represents advanced second-generation SiC MOSFET technology, characterized by high switching efficiency, low capacitance, latch-up resistance, and scalability through paralleling multiple devices.
Enhancement-mode N-channel SiC MOSFET. Maximum drain-source voltage of 900 V for high voltage applications. Rated continuous drain current of 36 A. Low Rds(on) of 78 mΩ facilitating low conduction losses. Fast switching enabled by 30.4 nC typical gate charge.
Wide gate-source voltage range from -8 V to +18 V allows robust gate driving. Thermal operation range from -55°C to 150°C for reliability. Compact TO-247 3-pin through-hole package. Ideal for power electronics, industrial automation, automotive electronics, and renewable energy systems.
This product is manufactured in China and aligns with Wolfspeed’s commitment to efficient power semiconductor solutions. It supports industrial and commercial applications demanding robust, high-efficiency power switching components.
Explore the comprehensive Wolfspeed MOSFET category on EnvMart for related power semiconductors and industrial electronics components.
Explore more products in our MOSFETs category.
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