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Wolfspeed N-Channel MOSFET Silicon Carbide Power Transistor 36 A, 900 V Enhancement Mode, TO-247 Package C3M0065090D

Category MOSFETs Brand Wolfspeed Condition New

Specifications

Country of Origin China
Brand Wolfspeed
Height 5.21mm
Length 16.13mm
Model C3M0065090D
Width 21.1mm
Mount Type Through Hole
Series C3M
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 900V
Maximum Drain Source Resistance Rds 78mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 30.4nC
Maximum Gate Source Voltage Vgs -8, +18V
Forward Voltage Vf 4.4V

Key Features

  • Enhancement-mode N-channel silicon carbide MOSFET for high efficiency.
  • Maximum power dissipation of 125 W supports robust operation.
  • Low maximum drain-source resistance of 78 mΩ reduces conduction losses.
  • High operating temperature range from -55°C to 150°C ensures reliability.
  • Typical gate charge of 30.4 nC enables fast switching performance.
  • High gate-source voltage tolerance from -8 V to +18 V for flexible drive.
  • Compact TO-247 3-pin package allows easy through-hole mounting.
  • Dimensioned at length 16.13 mm, width 21.1 mm, height 5.21 mm.

Product Description

Wolfspeed C3M0065090D is a high-performance N-Channel Silicon Carbide (SiC) Power MOSFET designed for power switching applications requiring high voltage, current capacity, and efficiency. Featuring an enhancement-mode channel, it supports a continuous drain current of 36 A and withstands a maximum drain-source voltage of 900 V.

This device is housed in a durable TO-247 through-hole package with three pins, facilitating straightforward integration into industrial and automotive circuits. The maximum power dissipation rating is 125 W, suitable for demanding power management tasks.

The MOSFET’s low on-resistance (78 mΩ) contributes to reduced conduction losses, enhancing overall system efficiency. Its typical gate charge of 30.4 nC enables fast switching speed, which, combined with a maximum gate-source voltage rating from -8 V to +18 V, allows for flexible and reliable drive control.

Operating temperature range from −55°C to +150°C ensures dependable performance under harsh environmental conditions. Physical dimensions are 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height, making it compact for varied uses.

The Wolfspeed C3M series represents advanced second-generation SiC MOSFET technology, characterized by high switching efficiency, low capacitance, latch-up resistance, and scalability through paralleling multiple devices.

Enhancement-mode N-channel SiC MOSFET. Maximum drain-source voltage of 900 V for high voltage applications. Rated continuous drain current of 36 A. Low Rds(on) of 78 mΩ facilitating low conduction losses. Fast switching enabled by 30.4 nC typical gate charge.

Wide gate-source voltage range from -8 V to +18 V allows robust gate driving. Thermal operation range from -55°C to 150°C for reliability. Compact TO-247 3-pin through-hole package. Ideal for power electronics, industrial automation, automotive electronics, and renewable energy systems.

This product is manufactured in China and aligns with Wolfspeed’s commitment to efficient power semiconductor solutions. It supports industrial and commercial applications demanding robust, high-efficiency power switching components.

Explore the comprehensive Wolfspeed MOSFET category on EnvMart for related power semiconductors and industrial electronics components.

Explore more products in our MOSFETs category.

Wolfspeed N-Channel MOSFET Silicon Carbide Power Transistor 36 A, 900 V Enhancement Mode, TO-247 Package C3M0065090D
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