STMicroelectronics SuperMESH N-Channel Power MOSFET, 5.2 A, 800 V Enhancement Mode, 3-Pin TO-220FP STP7NK80ZFP

STMicroelectronics STP7NK80ZFP is a high-performance SuperMESH N-Channel Power MOSFET designed for power electronics and industrial applications requiring efficient switching and high voltage handling capabilities. It supports a continuous drain current of 5.2 A and a maximum drain-source voltage of 800 V, making it suitable for use in power supplies, motor drives, and other high-power systems.

Featuring an enhancement mode channel, it operates within a wide temperature range from -55°C to 150°C, assuring reliability in harsh environments. The device is housed in a 3-Pin TO-220FP package designed for through-hole mount, enabling straightforward PCB assembly and effective heat dissipation. The SuperMESH technology enhances the MOSFET's switching performance and reduces power losses, which is crucial for energy-efficient designs.

Its maximum drain-source resistance (Rds) of 1.8 ohms helps minimize conduction losses, boosting overall circuit efficiency. The gate-source voltage tolerance of -30 to +30 V provides a wide operating gate voltage window, while a forward voltage of 1.6 V ensures minimal voltage drop during on-state conduction. Typical gate charge stands at 40 nC, supporting fast switching transitions.

This MOSFET meets JEDEC JESD97 standards, underscoring its industrial quality and reliability. It is ideal for use in industrial electronics, telecommunications, power regulation systems, and automotive electronic applications where durable, high-voltage components are essential.

Utilizes SuperMESH technology for improved thermal and switching efficiency. 3-Pin TO-220FP package with through-hole mount for robust mechanical installation. Continuous drain current capacity of 5.2 A and voltage rating of 800 V for demanding power applications.

Wide operating temperature range from -55°C to 150°C ensures versatile environmental adaptation. Low maximum drain-source resistance of 1.8 Ω reduces conduction losses significantly. High gate-source voltage tolerance facilitates flexible design and control.

Forward voltage rating of 1.6 V for low loss conduction states. Typical gate charge of 40 nC enables rapid switching for efficient power conversion. Complies with JEDEC JESD97 reliability standards.

Suitable for industrial, manufacturing, electronics, and automotive use cases, this Power MOSFET from STMicroelectronics combines robust electrical characteristics with reliable operation, facilitating energy-efficient designs for power electronics engineers and system integrators.

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