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DiodesZetex PNP Bipolar Transistor, -2 A Maximum DC Collector Current, -100 V Collector Emitter Voltage, 4-Pin ZXTP19100CGTA

Category Semiconductors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZXTP19100CGTA
Width 7.1mm
Mount Type Surface
Series ZXTPX
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -110V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 10.2W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 142MHz

Key Features

  • The transistor is housed in a 4-pin SOT-223 surface-mount package.
  • It supports a maximum power dissipation of 10.2 W for reliable operation.
  • The device operates across a temperature range from -55°C to +150°C.
  • The maximum transition frequency is 142 MHz, suitable for high-frequency applications.
  • It has a minimum DC current gain (hFE) of 20 for effective amplification.
  • Automotive standard compliant with AEC-Q101 for quality and robustness.
  • With a collector base voltage max of -110 V and emitter base voltage max of -7 V, it ensures stable performance.
  • The transistor configuration is single with PNP polarity, suitable for various discrete semiconductor roles.

Product Description

DiodesZetex ZXTP19100CGTA is a high-performance PNP bipolar transistor designed to meet requirements of industrial, automotive, and electronic applications. Featuring a maximum DC collector current of -2 A and maximum collector emitter voltage rating of -100 V, this device offers reliable switching and amplification capabilities.

Encapsulated in a compact 4-pin SOT-223 surface-mount package, it facilitates easy PCB mounting and efficient heat dissipation. The transistor can operate within a wide temperature range from -55°C to 150°C, allowing for use in harsh environments including automotive and industrial controls.

With a maximum power dissipation of 10.2 W and a transition frequency of 142 MHz, it supports fast switching and high power handling, making it suitable for power management and signal amplification. The minimum DC current gain (hFE) of 20 ensures effective transistor action to amplify input signals.

The ZXTP19100CGTA transistor also complies with the automotive standard AEC-Q101, underlining its robustness and quality assurance for automotive electronics. Its maximum collector base voltage of -110 V and emitter base voltage of -7 V enhances its voltage stability in various circuit configurations.

This single PNP transistor is ideal for use in electronic devices, automotive modules, power regulation circuits, and other semiconductor discrete component applications. Its compact size measures 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

The transistor is housed in a 4-pin surface mount SOT-223 package. Maximum collector current rating is -2 amperes. Collector emitter voltage withstands up to -100 volts. Power dissipation maximum is 10.2 watts. Operating temperature range from -55°C to +150°C.

Transition frequency up to 142 MHz supports high-speed switching. Minimum DC current gain (hFE) is 20. Automotive grade compliant with AEC-Q101 standard.

This transistor model ZXTP19100CGTA by DiodesZetex is suitable for industrial electronics, automotive circuits, and discrete semiconductor applications. Browse more products in Bipolar Transistors category on EnvMart for your electronic component needs.

Explore more products in our Semiconductors category.

DiodesZetex PNP Bipolar Transistor, -2 A Maximum DC Collector Current, -100 V Collector Emitter Voltage, 4-Pin ZXTP19100CGTA
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Frequently Asked Questions

The maximum DC collector current for this model is -2 A.

It has a maximum collector emitter voltage rating of -100 V.

This transistor is housed in a 4-pin SOT-223 surface-mount package.

The operating temperature range for this transistor is from -55°C to +150°C.

The maximum power dissipation for this unit is 10.2 W.

The maximum transition frequency is 142 MHz, suitable for high-frequency applications.

It has a minimum DC current gain (hFE) of 20.

This model complies with the automotive standard AEC-Q101.

The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

The maximum emitter base voltage (VEBO) is -7 V.

The ZXTP19100CGTA has a single PNP transistor configuration.

The country of origin for this transistor is India.

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