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DiodesZetex Small Signal NPN Transistor 200 mA 160 V 6-Pin SOT-363 MMDT5551-7-F

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DiodesZetex Small Signal NPN Transistor 200 mA 160 V 6-Pin SOT-363 MMDT5551-7-F

Name: DiodesZetex Small Signal NPN Transistor 200 mA 160 V 6-Pin SOT-363 MMDT5551-7-F
Brand: DiodesZetex
SKU: 218320
Price: 0.15 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	2.2mm
Model	MMDT5551-7-F
Width	2.2mm
Mount Type	Surface
Series	MMDT
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
Pin Count	6
Maximum Collector Emitter Voltage Vceo	160V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	180V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	200mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	300MHz

Key Features

Maximum DC collector current is 200 mA for reliable switching applications.
Collector-emitter voltage rated at 160 V enables high-voltage operation.
Surface mount SOT-363 package with compact 6 pins for efficient PCB layout.
Minimum DC current gain of 30 ensures good amplification performance.
Maximum power dissipation is 200 mW to prevent thermal overload.
Transition frequency up to 300 MHz suitable for high-frequency signals.
Wide operating temperature range from -55°C to 150°C supports industrial environments.
Transistor polarity is NPN with isolated configuration for versatile circuit design.

Product Description

DiodesZetex MMDT5551-7-F is a small signal NPN bipolar transistor designed for electronic applications requiring moderate current and voltage ratings. Its 160 V collector-emitter voltage and 200 mA maximum DC collector current make it suitable for low power switching and amplification tasks.

Featuring a compact 6-pin SOT-363 surface mount package with dimensions approximately 2.2 mm length, 2.2 mm width, and 1.1 mm height, it is ideal for space-constrained PCB designs. The transistor’s minimum DC current gain of 30 ensures adequate amplification in general purpose circuits.

This transistor supports a maximum power dissipation of 200 mW, helping maintain thermal stability. Its maximum transition frequency of 300 MHz allows use in moderately high frequency signal processing. With a broad operating temperature range from -55°C to 150°C, it is robust for industrial and commercial applications.

Its isolated transistor configuration and NPN polarity make it compatible with many standard circuit designs in amplifiers, switches, and signal processing. The product is RoHS compliant and supplied as new, suitable for manufacturing and repair in electronic components, power connectors, and discrete semiconductor sectors.

Maximum DC collector current of 200 mA for efficient switching. Collector-emitter voltage up to 160 V suitable for high voltage circuits. Compact SOT-363 6-pin surface mount package for space saving. Minimum DC current gain of 30 ensures amplification stability.

Power dissipation rated at 200 mW to avoid overheating. High transition frequency of 300 MHz for signal fidelity. Wide operating temperature range from -55°C to 150°C for industrial use. NPN polarity with isolated configuration for versatile circuit integration.

This transistor is widely used in electronics manufacturing for signal amplification and switching in industrial, commercial, and consumer electronic devices. Explore the extensive range of Bipolar Transistors on EnvMart for your specific design needs.