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DiodesZetex Small Signal NPN Transistor 100 mA 50 V 3-Pin SOT-23 FMMT413TD

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DiodesZetex Small Signal NPN Transistor 100 mA 50 V 3-Pin SOT-23 FMMT413TD

Name: DiodesZetex Small Signal NPN Transistor 100 mA 50 V 3-Pin SOT-23 FMMT413TD
Brand: DiodesZetex
SKU: 206001
Price: 7.24 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	FMMT413TD
Width	2.5mm
Mount Type	Surface
Series	FMMT413
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	50
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	150V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	330mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	150MHz

Key Features

Maximum DC collector current of 100 mA ensures moderate power handling.
Collector-Emitter voltage rating is 50 V, suitable for low voltage circuits.
Compact 3-pin SOT-23 surface mount package allows easy integration on PCBs.
Minimum DC current gain (hFE) of 50 for efficient switching performance.
Maximum power dissipation rated at 330 mW to manage thermal load.
High transition frequency of 150 MHz enables high-speed switching applications.
Operating temperature range from −55°C to 150°C for reliable operation in harsh environments.
Automotive grade compliance with AEC-Q101 standard ensures durability.

Product Description

DiodesZetex FMMT413TD is a small signal NPN transistor designed for electronic circuits requiring reliable switching and amplification. It supports a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage up to 50 V. Packaged in a compact 3-pin SOT-23 surface mount format, it is ideal for space-constrained applications on printed circuit boards.

This transistor features a minimum DC current gain (hFE) of 50, offering efficient performance in low power and signal amplification tasks. With a maximum power dissipation of 330 mW, it effectively manages heat generated during operation. The device is capable of operating frequencies up to 150 MHz, making it suitable for high-frequency switching and amplification scenarios.

Designed for durability, the FMMT413TD can operate reliably across a wide temperature range from −55°C to 150°C. It also complies with the automotive AEC-Q101 standard, ensuring suitability for automotive and other demanding environments.

The compact physical dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height provide a minimal footprint on printed circuit boards. The transistor's NPN polarity and single transistor configuration are typical for general-purpose semiconductor applications.

Maximum collector current: 100 mA. Collector-emitter voltage: 50 V. SOT-23 package for surface mounting. Minimum current gain (hFE): 50. Power dissipation: 330 mW max. Transition frequency: up to 150 MHz. Operating temperature range: −55°C to 150°C.

Automotive AEC-Q101 compliant. Compact size: 3 mm × 2.5 mm × 1.1 mm.

This transistor is widely used in industrial, automotive, electronic manufacturing, and general-purpose amplifier and switching circuits. Its small size and robust specifications make it suitable for a variety of electronic component assemblies where space efficiency and reliability are critical.

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