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Vishay Type P-Channel MOSFET, 110 A Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin TO-263 SUM110P06-08L-E3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | SUM110P06-08L-E3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM110P06-08L |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- Maximum continuous drain current is 110 amperes supporting high current applications.
- Maximum drain-source voltage rating is 60 volts ensuring safe operation under typical load conditions.
- Package type is TO-263, suitable for surface mounting on PCBs.
- Maximum power dissipation is 3.75 watts enabling efficient thermal performance.
- Typical gate charge is 160 nanocoulombs at specified gate voltage.
- Operating temperature ranges from -55°C minimum to 175°C maximum for harsh environments.
- Maximum gate-source voltage ranges from -20 to +20 volts for robust switching control.
- Maximum drain-source resistance is 8 milliohms ensuring low conduction losses.
Product Description
The Vishay SUM110P06-08L-E3 Type P-Channel MOSFET provides robust electrical performance for high-current and medium-voltage applications. Featuring a maximum continuous drain current rating of 110 amperes and a maximum drain-source voltage of 60 volts, it is designed for reliable and efficient switching.
Encapsulated in a compact 3-pin TO-263 surface mount package, this MOSFET supports ease of integration into various industrial and electronic circuits. The device's maximum power dissipation capacity of 3.75 watts ensures effective thermal management, suitable for demanding operational environments.
Its typical gate charge of 160 nC and a gate-source voltage tolerance ranging from -20 V to +20 V allows precise switching control, making it well-suited for power control and amplification in semiconductor circuits.
The component operates reliably across a wide temperature range, from -55°C to 175°C, thus accommodating harsh environmental conditions often encountered in industrial and automotive electronic systems.
Additional features include a low maximum drain-source resistance of 8 milliohms reducing power losses during conduction, and the compact physical dimensions allow for space-efficient board layouts.
Maximum continuous drain current: 110 A. Maximum drain-source voltage: 60 V. Package type: TO-263 surface mount. Maximum power dissipation: 3.75 W. Typical gate charge: 160 nC at specified voltage. Operating temperature: -55°C to 175°C.
Maximum gate-source voltage: -20 V to +20 V. Maximum drain-source resistance: 8 mΩ. Compact dimensions: 10.41 mm length, 9.65 mm width, 4.83 mm height.
This MOSFET is ideal for industrial, automotive, and power management applications requiring efficient switching of high currents at moderate voltages. Integration with modern semiconductor circuits is facilitated by its surface mount TO-263 package design.
Explore more Vishay semiconductor products and MOSFET components on EnvMart for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 110 amperes.
The maximum drain-source voltage rating is 60 volts.
It comes in a TO-263 surface mount package, which is suitable for PCB integration.
The maximum power dissipation capacity is 3.75 watts, allowing for effective thermal management.
The typical gate charge is 160 nanocoulombs at the specified gate voltage.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage ranges from -20 volts to +20 volts.
The maximum drain-source resistance is 8 milliohms, which helps reduce conduction losses.
The dimensions are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.
This model features a Type P channel, which is suitable for enhancement mode applications.
It is suitable for industrial, automotive, and power management applications requiring efficient switching of high currents at moderate voltages.
The country of origin for this product is Taiwan.
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