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Vishay N-Channel MOSFET 30 V 13.6 A SOIC 8-Pin Surface Mount Si4162DY-T1-GE3

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Vishay N-Channel MOSFET 30 V 13.6 A SOIC 8-Pin Surface Mount Si4162DY-T1-GE3

Name: Vishay N-Channel MOSFET 30 V 13.6 A SOIC 8-Pin Surface Mount Si4162DY-T1-GE3
Brand: Vishay
SKU: 217960
Price: 0.73 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.5mm
Length	5mm
Model	SI4162DY-T1-GE3
Width	4mm
Mount Type	Surface
Series	Si4162DY
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	13.6A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 13.6 A ensures robust current handling capacity.
Low maximum drain source resistance of 8 mΩ reduces power losses and enhances efficiency.
Compact SOIC 8-pin package suitable for automated surface mounting.
Supports operating temperature range from -55°C up to 150°C for versatile applications.
Maximum power dissipation of 2.5 W for reliable thermal management.
Typical gate charge of 20 nC facilitates fast switching performance.
Maximum drain source voltage rating of 30 V suitable for low-voltage power switching.
Forward voltage of 1.2 V optimizes conduction efficiency.

Product Description

The Vishay SI4162DY-T1-GE3 is an N-Channel MOSFET transistor designed for power and switching applications requiring a maximum continuous drain current of 13.6 A and a maximum voltage rating of 30 V. Packaged in a surface-mount SOIC 8-pin housing, this device offers reliable operation up to 150°C, making it suitable for a range of industrial, consumer electronics, and automotive applications.

This enhancement-mode MOSFET features a low maximum drain source resistance of 8 mΩ which minimizes conduction losses, thereby improving overall system efficiency. With a typical gate charge of 20 nC and gate source voltage tolerance of ±20 V, the transistor achieves rapid switching performance, ideal for high-frequency circuits.

The compact footprint of 5 mm length, 4 mm width, and 1.5 mm height supports dense PCB layouts in power management modules and discrete semiconductor circuits. Thermal dissipation capability is rated at 2.5 W, ensuring stable function under moderate loads.

Common applications include power switching, load driving, and voltage regulation in industrial automation, consumer electronics, telecommunication equipment, and embedded systems where robustness and thermal reliability are crucial.

Maximum continuous drain current: 13.6 A ensures high current capability. Enhancement type channel mode supports efficient power control. Surface-mount SOIC 8-pin package for automated assembly. Operating temperature range: -55°C to 150°C for versatile deployment.

Maximum power dissipation rated at 2.5 W. Typical gate charge of 20 nC facilitates high-speed switching. Drain source voltage limit of 30 V suitable for low-voltage circuits. Low Rds(on) enhances conduction efficiency. Compact package size aids in miniaturized PCB designs.

Reliable brand Vishay semiconductor ensures quality and performance standards. The package contents include the Vishay SI4162DY-T1-GE3 MOSFET transistor in 8-pin SOIC surface mount format, ready for integration into electronic assemblies.

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