Vishay P-Channel MOSFET, 6.8 A, 100 V, Enhancement Mode, 3-Pin TO-220 IRF9520PBF

Vishay IRF9520PBF is a P-Channel MOSFET designed for reliable switching and amplification in electronic applications. It supports a maximum continuous drain current of 6.8 A and a maximum drain-source voltage of 100 V, making it suitable for medium-power discrete semiconductor circuits.

Housed in a standard 3-pin TO-220 through-hole package, this MOSFET operates in enhancement mode with a gate-source voltage tolerance of -20 to +20 V. The device delivers low drain-source resistance of 600 milliohms, enabling efficient conduction.

Capable of dissipating up to 60 W, it performs reliably across a wide temperature range from -55°C to 175°C. Its compact dimensions of 10.41 mm length, 9.01 mm height, and 4.7 mm width facilitate integration into diverse PCB layouts.

This Vishay MOSFET is ideal for industrial, manufacturing, power management, and electronic hobbyist applications requiring robust, high-performance P-Channel switching components.

Maximum continuous drain current of 6.8 A supports medium-load power circuits. Maximum drain-source voltage rating of 100 V ensures safe operation within voltage limits. 3-pin TO-220 through-hole package allows easy mounting and heat dissipation.

Enhancement mode operation with wide gate voltage range (-20 to +20 V) for flexible drive. 60 W maximum power dissipation enables sustained power handling capacity. Typical gate charge of 18 nC optimizes switching times and efficiency.

Wide operational temperature range (-55°C to 175°C) ensures reliability under harsh conditions. Low on-resistance of 600 milliohms improves conduction efficiency and reduces loss. Compact size of 10.41 x 9.01 x 4.7 mm fits various applications.

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