Vishay IRF Type P-Channel MOSFET, 6.8 A, 100 V, Enhancement Mode, 3-Pin TO-220 IRF9520PBF

Vishay IRF9520PBF is a high-performance P-Channel MOSFET transistor designed for electronic applications requiring efficient switching and power control. It offers a continuous drain current capacity of 6.8 amperes and can withstand a maximum drain-source voltage of 100 volts. This enhancement mode MOSFET comes in a 3-pin TO-220 through-hole package, facilitating easy integration into printed circuit boards.

Engineered for durability, the device supports power dissipation up to 60 watts and operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for industrial and commercial electronic circuits in harsh or demanding environments.

The IRF9520PBF presents a low maximum drain-source resistance of 600 milliohms, which contributes to efficient conduction and reduced power losses. It features typical gate charge of 18 nanocoulombs, enhancing switching efficiency and reducing the energy loss during transistor operation. The maximum gate-source voltage rating of -20 to +20 volts ensures safe operation within recommended driving voltages.

Its compact TO-220 package with precise dimensions (length 10.41mm, width 4.7mm, height 9.01mm) allows convenient mounting and thermal management through standardized heatsinks or cooling solutions.

This MOSFET is ideal for use in industrial power management, motor control, power supply circuits, and other electronic systems requiring reliable, high-current, p-channel enhancements.

Supports a maximum continuous drain current of 6.8 amperes. Designed for operation at up to 100 volts drain-source voltage. Utilizes enhancement mode channel type for efficient switching. Features a TO-220 through-hole mounting package with 3 pins for reliable soldering.

Maximum power dissipation rating of 60 watts ensures robust thermal management. Operates within temperature range from -55°C to 175°C ensuring suitability for harsh environments. Typical gate charge of 18 nanocoulombs at specified gate voltage minimizes switching losses.

Maximum drain-source resistance of 600 milliohms enables efficient conduction. Maximum gate-source voltage rating of -20 to +20 volts for safe gate operation. Compact dimensions with length 10.41mm, width 4.7mm, and height 9.01mm.

For electronics professionals seeking reliable discrete semiconductor components, Vishay’s IRF9520PBF offers a robust solution tailored for power management and switching applications. Explore the full range of semiconductor devices for industrial and commercial uses on EnvMart.