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Vishay IRL N-Channel MOSFET 9 A 200 V Enhancement 3-Pin TO-220 IRL630PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRL630PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 2V |
Key Features
- This MOSFET operates in enhancement mode providing high efficiency.
- Maximum power dissipation rating is 74 W ensuring reliable performance.
- Typical gate charge is 40 nC at Vgs of 4 V for switching control.
- Operating temperature range spans from -55°C to 150°C suitable for demanding environments.
- Through hole mount with 3 pins facilitates easy PCB installation.
- Maximum drain-source resistance is 400 mOhm offering low conduction losses.
- Package dimensions include length of 10.41 mm, width of 4.7 mm, and height of 9.01 mm.
- Maximum gate-source voltage is -10 to +10 V for safe operation.
Product Description
Vishay IRL630PBF is a high-performance N-Channel enhancement mode MOSFET designed to handle continuous drain currents up to 9 amperes with a maximum drain-source voltage rating of 200 volts. Packaged in a TO-220 form factor with three pins, it is designed for through-hole mounting, simplifying installation on printed circuit boards used in power electronics and motor control applications.
This device offers a maximum power dissipation of 74 watts, enabling it to handle substantial thermal loads in industrial and commercial equipment. Its low on-resistance of 400 milliohms ensures efficient conduction with minimal energy loss, ideal for switching power supplies and high-speed switching circuits.
The gate charge specification of 40 nanocoulombs at 4 volts gate-source voltage supports rapid switching performance, reducing switching losses and enhancing overall device efficiency. The device operates reliably across a wide temperature range from -55°C up to 150°C, making it suitable for harsh environments including automotive, industrial, and power management systems.
Package dimensions measure approximately 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height, fitting standard mounts and heat sinks for thermal management. The maximum gate-source voltage rating of -10 to +10 volts ensures protection against voltage spikes during operation.
This MOSFET is manufactured in China and is supplied new, meeting industry standards for quality and durability. It is widely used in industrial drives, motor controllers, power converters, and other electronic component assemblies requiring robust switching capability.
This MOSFET operates in enhancement mode providing high efficiency. Maximum power dissipation rating is 74 W ensuring reliable performance. Typical gate charge is 40 nC at Vgs of 4 V for switching control. Operating temperature range spans from -55°C to 150°C suitable for demanding environments.
Through hole mount with 3 pins facilitates easy PCB installation. Maximum drain-source resistance is 400 mOhm offering low conduction losses. Package dimensions include length of 10.41 mm, width of 4.7 mm, and height of 9.01 mm.
Maximum gate-source voltage is -10 to +10 V for safe operation. Explore more electronic components and MOSFETs to find suitable parts for your applications on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
This MOSFET has a maximum drain-source voltage rating of 200 V.
The maximum power dissipation rating is 74 W, allowing it to handle substantial thermal loads.
It operates reliably within a temperature range of -55°C to 150°C.
The typical gate charge is 40 nC at a gate-source voltage of 4 V.
It features a through-hole mount with 3 pins for easy PCB installation.
The package dimensions are approximately 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
The maximum gate-source voltage is rated at -10 to +10 V.
The maximum drain-source resistance is 400 mΩ, which helps reduce conduction losses.
This MOSFET is suitable for power electronics, motor control applications, and switching power supplies.
The channel type is N-channel, operating in enhancement mode.
This MOSFET is manufactured in China.
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