DiodesZetex 1N4448HWT-7 Silicon Junction Switching Diode is designed for efficient small signal switching in discrete semiconductor applications. This component features a sleek SOD-523 surface mount package with 2 pins, ideal for automated PCB manufacturing processes in electronic devices.
Rated for a maximum forward current of 250 mA and a peak reverse repetitive voltage of 80 V, it provides dependable operation in circuits requiring moderate current handling and voltage blocking capabilities. The low forward voltage drop of 1.25 V minimizes conduction losses, enhancing overall circuit efficiency.
One of the key performance aspects is its fast peak reverse recovery time of 4 ns, making it well-suited for high-speed switching applications in modern electronics, including power management and signal processing contexts. It supports a robust operating temperature range from -65°C to 150°C, enabling reliable use in automotive, industrial, and commercial environments.
The diode also supports a peak non-repetitive forward surge current of 2 A to withstand transient overloads, and its maximum power dissipation rating of 150 mW guards against thermal damage during prolonged use.
Physical dimensions - length of 1.7 mm, width of 0.9 mm, and height of 1.35 mm - enable compact and space-saving electronic circuit designs. This diode is a new, quality electronic component manufactured in compliance with industry standards, although it does not carry specific approvals or automotive certifications.
Applications include industrial electronics, manufacturing equipment, consumer electronic devices, and any PCB assemblies requiring reliable silicon junction small signal switching diodes.
Supports maximum forward current of 250 mA suitable for small signal switching. Maximum peak reverse voltage of 80 V ensures reliability in power switching circuits. Low forward voltage of 1.25 V reduces power loss during operation.
Compact surface mount SOD-523 package with 2 pins for automated PCB assembly. Efficient peak reverse recovery time of 4 ns for high-speed switching applications. Wide operating temperature range from -65°C to 150°C for harsh environmental conditions.
Maximum power dissipation of 150 mW limits thermal stress during continuous use. Peak non-repetitive surge current capability of 2 A for transient load situations. Dimensions: length 1.7 mm, width 0.9 mm, height 1.35 mm facilitating compact electronic designs.
Designed and manufactured as a new, reliable discrete semiconductor component. Explore more products in Diodes and Switching Diodes categories on EnvMart for your industrial and commercial electronic component needs.
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent