Nexperia N-Channel MOSFET, 3.9 A, 30 V Enhancement Mode, 3-Pin SOT-23 Surface-Mount PMV50ENEAR

Nexperia PMV50ENEAR N-Channel MOSFET is a trench technology enhancement mode field-effect transistor designed for surface-mount applications. It offers a maximum continuous drain current of 3.9 A and a maximum drain-source voltage of 30 V, making it suitable for low voltage power switching tasks.

Encapsulated in a small 3-pin SOT-23 package measuring 3 mm length, 1.4 mm width, and 1 mm height, this MOSFET is optimized for compact design layouts in electronic circuits. The device features a low drain-source resistance of 69 mΩ to minimize conduction losses.

This MOSFET is logic level compatible and provides very fast switching speeds thanks to the use of trench MOSFET technology. The device includes electrostatic discharge (ESD) protection greater than 2 kV HBM, enhancing the robustness and reliability in demanding environments.

Qualification to the automotive standard AEC-Q101 permits its use in automotive applications requiring stringent quality and reliability standards. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits in industrial, automotive, and consumer electronics.

This is a surface-mount device suitable for high-density PCB layouts. Wide operating temperature range from -55°C to 150°C supports operation in harsh conditions. The maximum gate-source voltage of 20 V allows for proper gate control without risk of damage.

Power dissipation capability of 3.9 W facilitates thermal stability under load. The compact SOT-23 package ensures minimal footprint while delivering robust performance.

The Nexperia PMV50ENEAR is a high-quality power MOSFET designed for efficient low voltage switching, widely used in electronic systems requiring compact, fast-switching transistors with automotive compliance. Browse EnvMart's Electronics & Electricals category for more semiconductors and MOSFETs.