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Vishay Type P-Channel Enhancement MOSFET, 8 A, 12 V, 6-Pin TSOP SI3473CDV-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SI3473CDV-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | Si3473CDV |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Surface mount TSOP package with 6 pins provides compact and reliable installation.
- Maximum Drain Source Resistance of 36 milliohms ensures efficient power handling.
- Supports operating temperature range from -55°C to 150°C for versatile applications.
- Designed with TrenchFET® technology for improved switching performance.
- Typical gate charge of 43nC at specified gate voltage enables fast switching.
- Maximum power dissipation rated at 4.2 watts suitable for low power electronic circuits.
- Pin count of 6 pins supports standard PCB layouts and configurations.
Product Description
Vishay SI3473CDV-T1-GE3 is a Type P-Channel Enhancement MOSFET designed for efficient switching in electronic circuits. Rated for a maximum continuous drain current of 8 A and a maximum drain-source voltage of 12 V, it offers reliable performance in surface mount TSOP package with 6 pins.
This MOSFET features a low drain-source resistance of 36 milliohms, reducing conduction losses and enhancing efficiency in power management applications. The device operates within a wide temperature range from -55°C up to 150°C, making it suitable for various industrial, automotive, and electronic environments requiring thermal robustness.
TrenchFET® technology incorporated in this device offers optimized switching characteristics and low gate charge of 43nC at the standard gate voltage, facilitating high-speed operation in DC-DC converters, load switching, and portable equipment.
With a power dissipation capability of 4.2 watts, the SI3473CDV-T1-GE3 is ideal for applications requiring moderate power throughput with compact footprint, thanks to its 1.7 mm width, 3.1 mm length, and 1 mm height dimensions.
Surface mount TSOP package with 6 pins provides compact and reliable installation. Maximum Drain Source Resistance of 36 milliohms ensures efficient power handling. Wide operating temperature range from -55°C to 150°C suitable for harsh conditions.
Typical gate charge of 43nC allows fast switching speeds. Maximum gate-source voltage of 8 V for robust operation. TrenchFET® design optimizes performance in power and switching applications. Forward voltage of -1.2 V suitable for low voltage switching circuits.
This MOSFET is mainly used as a load switch or PA switch in consumer electronics, automotive electronics, and industrial power control circuits. Its compact size and surface mount nature facilitate high-density PCB designs and effective thermal management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
The maximum drain-source voltage is 12 V.
It has a maximum drain-source resistance of 36 milliohms.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 43 nC at the specified gate voltage.
The maximum power dissipation is rated at 4.2 watts.
This model has dimensions of 1.7 mm in width, 3.1 mm in length, and 1 mm in height.
It comes in a surface mount TSOP package with 6 pins.
The maximum gate-source voltage is 8 V.
The forward voltage is -1.2 V.
It is mainly used as a load switch or PA switch in consumer electronics, automotive electronics, and industrial power control circuits.
This model is designed with TrenchFET® technology for improved switching performance.
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