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onsemi Small Signal PNP Transistor 100 mA, 45 V, 6-Pin SOT-363 BC857BDW1T1G

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onsemi Small Signal PNP Transistor 100 mA, 45 V, 6-Pin SOT-363 BC857BDW1T1G

Name: onsemi Small Signal PNP Transistor 100 mA, 45 V, 6-Pin SOT-363 BC857BDW1T1G
Brand: onsemi
SKU: 212566
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	BC857BDW1T1G
Width	2.2mm
Mount Type	Surface
Series	BC857BDW1
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
Pin Count	6
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	200
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	380mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz

Key Features

Designed for surface mount applications with a compact 6-pin SOT-363 package.
Maximum DC collector current of 100 mA for low power switching.
Collector-emitter voltage rating of 45 V suitable for various electronic circuits.
High DC current gain with minimum 200 hFE, ensuring efficient amplification.
Maximum power dissipation of 380 mW supports moderate thermal conditions.
Wide operating temperature range from -55°C to 150°C for reliability in harsh environments.
Automotive qualified to AEC-Q101 standard for stringent quality assurance.

Product Description

onsemi BC857BDW1T1G Small Signal PNP Transistor is designed for compact surface mount electronic applications requiring reliable switching and amplification. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, making it suitable for a variety of low power transistor use cases in industrial, automotive, and consumer electronics.

This transistor is housed in a 6-pin SOT-363 package, allowing for efficient PCB layout and assembly in space-constrained designs. It is an isolated transistor configuration with a PNP polarity, offering a minimum current gain (hFE) of 200, which ensures enhanced amplification performance.

The device supports maximum power dissipation of 380 mW, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C, enabling usage in challenging environments. The maximum transition frequency of 100 MHz makes it suitable for high-frequency signal applications.

Automotive-grade quality is guaranteed by compliance with the AEC-Q101 standard, providing confidence in performance and durability for automotive electronics. Designed for surface mount applications with a compact 6-pin SOT-363 package.

Maximum DC collector current of 100 mA for low power switching. Collector-emitter voltage rating of 45 V suitable for various electronic circuits. High DC current gain with minimum 200 hFE, ensuring efficient amplification.

Maximum power dissipation of 380 mW supports moderate thermal conditions. Wide operating temperature range from -55°C to 150°C for reliability in harsh environments. Automotive qualified to AEC-Q101 standard for stringent quality assurance.

This onsemi BC857BDW1T1G transistor is applicable in industrial, automotive, and electronic manufacturing use cases requiring reliable PNP transistor switching components. It is a vital small signal device for circuit amplification, switching, and signal modulation tasks.

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