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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 900 V 5.8 A TO-220 STP6NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP6NK90Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET supports a maximum power dissipation of 140W for enhanced performance.
- It features an enhancement channel mode suitable for high efficiency switching.
- The device includes three pins and is designed for through-hole mounting.
- Maximum drain-source resistance is 2 ohms ensuring low conduction losses.
- Operates within temperature ranges from -55°C to 150°C for robust industrial use.
- Typical gate charge of 46.5 nC facilitates fast switching application.
- Maximum gate-source voltage ranges from -30 V to +30 V, allowing wide control voltages.
- Compact dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height aid PCB space optimization.
Product Description
STMicroelectronics STP6NK90Z is an N-Channel MDmesh™ SuperMESH™ MOSFET designed for high voltage and current applications, suitable for industrial electronic use.
This MOSFET supports a maximum continuous drain current of 5.8 A and a drain-source voltage of 900 V, packaged in a 3-pin TO-220 form factor with through-hole mount type for ease of integration into power electronics.
It employs an enhancement channel mode, offering maximum drain-source resistance of 2 Ω which ensures efficient conduction and reduced power losses. The device is engineered to handle power dissipation up to 140 W and withstand operating temperatures between -55°C and 150°C, making it suitable for demanding environments.
Typical gate charge of 46.5 nC at Vgs and a forward voltage of 1.6 V support swift switching, optimizing performance in power management systems. The maximum gate-source voltage rating is -30 V to +30 V, allowing flexibility in gate drive circuitry design.
Its compact physical dimensions (10.4 mm length, 4.6 mm width, and 9.15 mm height) facilitate integration into compact electronic assemblies and circuits. This MOSFET is ideal for applications in industrial automation, power conversion, and high voltage switching circuits requiring robust and reliable semiconductor components.
Package contents include a single STMicroelectronics STP6NK90Z MOSFET device ready for through-hole mounting. Explore EnvMart’s extensive selection of semiconductor components including MOSFETs for industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.8 A.
It has a maximum drain-source voltage rating of 900 V.
This MOSFET supports a maximum power dissipation of 140 W.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The maximum gate-source voltage ranges from -30 V to +30 V.
This model is designed for through-hole mounting.
The maximum drain-source resistance is 2 ohms.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge is 46.5 nC.
It is suitable for industrial automation, power conversion, and high voltage switching circuits.
This MOSFET has three pins.
It belongs to the MDmesh and SuperMESH series.
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