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onsemi Darlington Transistor PNP, 1.2 A, 30 V, 3-Pin SOT-23 BCV26

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.93mm
Length 2.92mm
Model BCV26
Mount Type Surface
Series BCV26
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 1.2A
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 4000
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1V
Maximum Collector Base Voltage VCBO 40V
Maximum Collector Cut-off Current 0.0001mA
onsemi 1 Darlington Transistor PNP, 1.2 A 30 V HFE 4000, 3-Pin SOT-23

Key Features

  • Maximum continuous collector current is 1.2 amperes.
  • Maximum collector emitter voltage rating is 30 volts.
  • High DC current gain with a minimum hFE of 4000.
  • Designed with a compact 3-pin SOT-23 surface-mount package.
  • Operates within a temperature range of -55°C to 150°C.
  • Maximum collector saturation voltage of 1 volt ensures efficient switching.
  • Maximum emitter base voltage rating is 10 volts.
  • Maximum collector base voltage rating is 40 volts.

Product Description

onsemi BCV26 is a high-gain Darlington PNP transistor designed for various electronic and semiconductor applications requiring high current amplification. It is packaged in a compact 3-pin SOT-23 surface mount package suitable for efficient PCB mounting in compact devices.

This transistor can handle a maximum continuous collector current of 1.2 A and withstand collector emitter voltages up to 30 V. Its high DC current gain (minimum hFE of 4000) makes it well suited for amplification and switching circuits in electronic components and power control systems.

The operating temperature range from -55°C to 150°C ensures reliable performance in demanding industrial and commercial environments. Its low maximum collector cutoff current of 0.0001 mA reduces leakage losses, enhancing efficiency.

This PNP transistor has maximum voltage limits including a maximum emitter base voltage of 10 V, collector base voltage of 40 V, and a maximum collector saturation voltage of 1 V, providing stable operation under various load conditions.

Common use cases include applications in power electronics, amplification circuits, switching regulators, and other semiconductor electronic designs where reliable and efficient current control is critical.

Maximum continuous collector current is 1.2 amperes. Maximum collector emitter voltage rating is 30 volts. High DC current gain with a minimum hFE of 4000. Designed with a compact 3-pin SOT-23 surface-mount package. Operates within a temperature range of -55°C to 150°C.

Maximum collector saturation voltage of 1 volt ensures efficient switching. Maximum emitter base voltage rating is 10 volts. Maximum collector base voltage rating is 40 volts. Low maximum collector cutoff current of 0.0001 mA for minimal leakage.

Single element transistor with PNP polarity.

This product belongs to the Darlington Transistor category within the Electronics & Electricals semiconductor segment at EnvMart, ensuring access to reliable transistors for industrial, laboratory, and manufacturing electronics solutions.

onsemi Darlington Transistor PNP, 1.2 A, 30 V, 3-Pin SOT-23 BCV26
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