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STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP150N10F7AG

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Model STP150N10F7AG
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 110A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 4.2mΩ
Maximum Power Dissipation Pd 250W
Typical Gate Charge Qg @ Vgs 127nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Utilizes STripFET F7 technology for very low on-state resistance.
  • Enhanced trench gate structure reduces capacitance and gate charge for improved switching efficiency.
  • Maximum power dissipation of 250 W supports high-performance applications.
  • Rated for operating temperatures from -55°C to 175°C.
  • Designed for through-hole mounting, suitable for various industrial applications.
  • Maximum gate-source voltage of 20 V and forward voltage of 1.2 V.
  • Ideal for automotive and general-purpose switching applications.
  • 3-pin configuration ensures easy integration into circuit designs.

Product Description

The STMicroelectronics STP150N10F7AG is a high-performance Type N-Channel Power MOSFET designed with STripFET F7 technology, offering a maximum continuous drain current of 110 A and a maximum drain-source voltage of 100 V. Its 3-pin TO-220 package ensures reliable through-hole mounting, suitable for robust industrial, automotive, and electronic applications.

This MOSFET features an enhanced trench gate structure that delivers very low on-state resistance and reduces internal capacitance and gate charge, enabling faster and more efficient switching. With a maximum power dissipation capacity of 250 W and an operating temperature range from -55°C to 175°C, this device is engineered to withstand demanding environments and high thermal loads.

The component includes a maximum gate-source voltage of 20 V and a forward voltage of 1.2 V, ensuring stable operation. It is 100% avalanche rated, enhancing its robustness and reliability in switching applications where performance under transient conditions is critical.

Applications include automotive systems, power management circuits, and other switch-mode power supplies where high efficiency and reliability are required. The device’s design supports its integration into diverse industrial and manufacturing settings.

Utilizes STripFET F7 technology for enhanced performance. Very low on-state resistance reduces power losses. High maximum power dissipation supports demanding loads. Wide operating temperature range ensures reliability. Through-hole mountable 3-pin TO-220 package.

Suitable for automotive and industrial switching applications. 100% avalanche rated for durable operation. Reduced gate charge enables faster switching speeds. Stable forward voltage ensures consistent performance. Designed for long-term reliability and efficiency.

For more electronic and semiconductor components including MOSFETs, explore the Electronics & Electricals category on EnvMart.

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP150N10F7AG
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Frequently Asked Questions

The maximum continuous drain current for this model is 110 A.

The maximum drain-source voltage rating is 100 V.

It has a maximum power dissipation capacity of 250 W.

The operating temperature range is from -55°C to 175°C.

This model is designed for through-hole mounting.

It comes in a TO-220 package type.

The maximum gate-source voltage is 20 V.

The typical gate charge at Vgs is 127 nC.

The forward voltage is 1.2 V.

This device has a 3-pin configuration.

It utilizes a Type N channel configuration.

It utilizes STripFET F7 technology for enhanced performance.

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