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onsemi P-Channel Enhancement Mode MOSFET 130 mA 50 V 3-Pin SOT-23 BSS84
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | BSS84 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | BSS84 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 130mA |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Typical Gate Charge Qg @ Vgs | 0.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed using onsemi proprietary high cell density DMOS technology.
- Maximum power dissipation of 250 mW ensuring reliable operation.
- Operating temperature range from -65°C to 150°C for robust application.
- Low on-state resistance with maximum 10 Ω drain-source resistance.
- Enhanced ruggedness and superior switching performance.
- Typical gate charge of 0.9 nC at specified gate-source voltage.
- Supports automotive standards AEC-Q200, AEC-Q100, and AEC-Q101.
Product Description
onsemi BSS84 is a P-Channel Enhancement Mode MOSFET designed for low current switching applications. It supports a continuous drain current of 130 mA with a maximum drain-source voltage rating of 50 V, making it suitable for compact semiconductor device integration.
Manufactured using a proprietary high cell density DMOS technology, this MOSFET ensures low on-state resistance, offering efficient switching with minimal power loss. The device package is a standard 3-pin SOT-23 surface-mount type with a compact footprint of 3 mm length, 1.3 mm width, and 1 mm height.
This MOSFET is ideal for various industrial and electronic applications including load switching, DC/DC converters, battery protection, power management circuits, and DC motor control systems. It operates reliably across a wide temperature range from -65°C to 150°C, equipped to meet automotive grade requirements as specified by AEC-Q200, AEC-Q100, and AEC-Q101 standards.
Key electrical characteristics include a maximum power dissipation of 250 mW, forward voltage of -1.2 V, maximum gate-source voltage tolerance of -20 V to +20 V, and a typical gate charge of 0.9 nC which enables fast switching with high density integration.
Designed using onsemi's proprietary DMOS technology for high density and rugged performance. Low on-state resistance providing efficient high saturation current capabilities. Voltage controlled P-Channel device suitable for small signal switching.
Wide operating temperature range and automotive compliance for versatile usage. Compact SOT-23 package ideal for surface mount applications. Applications include load switching, DC/DC converters, battery protection, and power control.
This product belongs to the 'Discrete Semiconductor' category under the semiconductor division of electronic components, providing trusted performance for electronic and industrial manufacturing needs. Explore more onsemi MOSFET devices and Discrete Semiconductors to find compatible solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 130 mA.
It has a maximum drain-source voltage rating of 50 V.
The operating temperature range is from -65°C to 150°C.
The maximum drain-source resistance is 10 Ω.
It is packaged in a standard 3-pin SOT-23 surface-mount type.
The typical gate charge at the specified gate-source voltage is 0.9 nC.
It supports automotive standards AEC-Q200, AEC-Q100, and AEC-Q101.
The maximum power dissipation is 250 mW.
The forward voltage is -1.2 V.
The dimensions are 3 mm in length, 1.3 mm in width, and 1 mm in height.
It is suitable for load switching, DC/DC converters, battery protection, and power management circuits.
This model is a P-Channel Enhancement Mode MOSFET.
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