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DiodesZetex NPN Transistor 6 A, 60 V, 4-Pin SOT-223 ZXTN2010GTA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZXTN2010GTA
Width 7.1mm
Mount Type Surface
Series ZXTN2010G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 150V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3W
Maximum DC Collector Current Idc 6A
Transistor Configuration Single
Maximum Transition Frequency ft 130MHz

Key Features

  • The transistor has a maximum DC collector current of 6 amperes.
  • It supports a maximum collector-emitter voltage of 60 volts.
  • Configured as a single NPN transistor with a pin count of 4.
  • Maximum power dissipation is rated at 3 watts.
  • Features a minimum DC current gain (hFE) of 20.
  • Operating temperature ranges from -55°C to 150°C.
  • Maximum transition frequency (ft) is 130 MHz.
  • Complies with automotive standard AEC-Q101 for reliability.

Product Description

DiodesZetex ZXTN2010GTA is a high-performance bipolar NPN transistor designed for efficient switching and amplification tasks in electronic circuits. This transistor supports a maximum DC collector current of 6 amperes and a maximum collector-emitter voltage of 60 volts, making it suitable for power and control applications within automotive and industrial environments.

Its 4-pin SOT-223 surface mount package ensures compactness and easy integration onto PCBs, supporting automated manufacturing processes. The device is configured as a single transistor with a minimum DC current gain (hFE) of 20 and can operate reliably in temperature ranges from -55°C up to 150°C.

With a maximum power dissipation of 3 watts and a transition frequency of 130 MHz, it balances power handling and speed for diverse uses in switching circuits and amplification stages. The ZXTN2010GTA complies with the stringent automotive standard AEC-Q101, confirming its robust quality for demanding automotive electronics applications.

Key features include its compact physical dimensions measuring 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height, optimized for space-constrained designs. The transistor delivers up to 6 A collector current for power applications.

Rated for 60 V maximum collector-emitter voltage. Compact 4-pin SOT-223 package form. Low power dissipation of 3 W for efficient thermal management. Minimum DC current gain of 20 for reliable amplification. Wide operating temperature range from -55°C to 150°C.

High transition frequency of 130 MHz suitable for fast switching. Automotive-grade certification with AEC-Q101 standard. Physical dimensions support surface mount PCB assembly.

This transistor is extensively used in automotive electronics, industrial power control modules, and other semiconductor applications requiring reliable NPN switching components. It supports enhanced production efficiency through its surface mount design, meeting modern electronics manufacturing standards.

Explore the full range of Bipolar Transistors at EnvMart for advanced electronic component solutions tailored to industrial and automotive needs.

DiodesZetex NPN Transistor 6 A, 60 V, 4-Pin SOT-223 ZXTN2010GTA
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