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| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3.5mm |
| Model | ZXTN2020FTA |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | ZXTN2020F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 160V |
| Maximum Power Dissipation Pd | 1.56W |
| Maximum DC Collector Current Idc | 4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 130MHz |
DiodesZetex ZXTN2020FTA is a general-purpose NPN bipolar transistor designed for applications requiring high collector current and voltage handling. It operates with a maximum DC collector current of 4 A and a collector-emitter voltage of 100 V, making it suitable for various electronic circuits where reliable switching and amplification are critical.
This transistor features a single transistor configuration with NPN polarity housed in a compact 3-pin SOT-23 surface mount package. The surface mount design enables efficient PCB layout and automated assembly processes, improving manufacturing productivity.
The ZXTN2020FTA supports a maximum power dissipation of 1.56 watts and a transition frequency up to 130 MHz, facilitating high-speed electronic applications. Its broad operating temperature range from -55°C to 150°C ensures performance stability across challenging industrial, automotive, and consumer electronic environments.
Physically, the device measures 3.5 mm in length, 2.5 mm in width, and 1.1 mm in height, making it suitable for compact assemblies. Manufactured in Germany, it complies with rigorous quality control standards but does not carry specific automotive certifications.
Maximum DC collector current of 4 A. Collector-emitter voltage of 100 V. SOT-23 3-pin surface mount package. Single NPN transistor configuration. High-frequency switching capability up to 130 MHz. Power dissipation rating of 1.56 watts.
Wide operating temperature range from -55°C to 150°C. Compact dimensions for space-saving designs. Manufactured in Germany ensuring quality.
This bipolar transistor is ideal for use in industrial electronics, consumer devices, power management circuits, and other applications requiring reliable, efficient transistor performance. Browse our wide range of semiconductor components at EnvMart for compatible parts and additional Bipolar Transistors.
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