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DiodesZetex PNP Transistor, Maximum DC Collector Current -200 mA, Collector Emitter Voltage -400 V, 4-Pin SOT-223 FZT558TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model FZT558TA
Width 7.3mm
Mount Type Surface
Series FZT558
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -400V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand STMicroelectronics

Key Features

  • Designed for surface mount with 4-pin SOT-223 package configuration.
  • Maximum power dissipation of 2 watts ensuring reliable performance.
  • Collector base voltage rated at 400 V and emitter base voltage at 5 V.
  • Transistor polarity is PNP with minimum DC current gain (hFE) of 15.
  • Operating temperature range from -55°C to 150°C for demanding environments.
  • Maximum transition frequency of 50 MHz supports moderate speed switching.
  • Four-pin configuration suitable for various electronic circuits and power applications.

Product Description

DiodesZetex FZT558TA is a high voltage PNP transistor designed for use in electronic applications requiring reliable switching and amplification. Featuring a 4-pin SOT-223 surface mount package, this transistor supports a maximum DC collector current of -200 mA and can withstand collector-emitter voltages up to -400 V, making it suitable for power management and control circuits.

The device dissipates a maximum power of 2 watts, ensuring robust performance under typical operating conditions. It supports a collector base voltage of 400 V and emitter base voltage of 5 V, along with a minimum DC current gain (hFE) of 15. Operating temperature ranges from -55°C to 150°C, allowing use in harsh environments including automotive and industrial applications.

Its maximum transition frequency of 50 MHz facilitates moderate speed switching applications. The compact and standardized SOT-223 package dimensions provide ease of integration into circuit board layouts.

This transistor conforms to automotive standards AEC-Q101, AEC-Q200, and AEC-Q100, confirming its quality and reliability for automotive electronics. Designed for surface mount with 4-pin SOT-223 package configuration. Maximum power dissipation of 2 watts ensuring reliable performance.

Collector base voltage rated at 400 V and emitter base voltage at 5 V. Transistor polarity is PNP with minimum DC current gain (hFE) of 15. Operating temperature range from -55°C to 150°C for demanding environments. Maximum transition frequency of 50 MHz supports moderate speed switching.

Compact device dimensions: length 6.7 mm, width 7.3 mm, and height 1.7 mm. Automotive standards compliant: AEC-Q101, AEC-Q200, and AEC-Q100.

This transistor is ideal for industrial electronics, automotive control systems, power regulation, and general-purpose amplifying circuits. Browse the Bipolar Transistors category on EnvMart to explore complementary components such as NPN transistors and power modules.

DiodesZetex PNP Transistor, Maximum DC Collector Current -200 mA, Collector Emitter Voltage -400 V, 4-Pin SOT-223 FZT558TA
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Frequently Asked Questions

The maximum DC collector current for the FZT558TA is -200 mA.

The collector-emitter voltage rating for this model is -400 V.

It has a maximum power dissipation of 2 watts, ensuring reliable performance under typical operating conditions.

The operating temperature range for the FZT558TA is from -55°C to 150°C.

The maximum transition frequency for this model is 50 MHz, which supports moderate speed switching applications.

This transistor comes in a 4-pin SOT-223 surface mount package configuration.

The minimum DC current gain (hFE) for the FZT558TA is 15.

It complies with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.

The dimensions of this model are 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height.

The maximum collector base voltage (VCBO) for the FZT558TA is 400 V.

This transistor is suitable for industrial electronics, automotive control systems, power regulation, and general-purpose amplifying circuits.

The maximum emitter base voltage (VEBO) for the FZT558TA is 5 V.

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